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FDS8960C Dual N & P-Channel PowerTrench MOSFET November 2005 FDS8960C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode Q1: N-Channel power field effect transistors are produced using Fairchild Semiconductors advanced PowerTrench 7.0A, 35V R = 0.024 V = 10V DS(on) GS process that has been especially tailored to minimize R = 0.032 V = 4.5V on-state ressitance and yet maintain superior switching DS(on) GS performance. Q2: P-Channel These devices are well suited for low voltage and 5A, 35V R = 0.053 V = 10V DS(on) GS battery powered applications where low in-line power loss and fast switching are required. R = 0.087 V = 4.5V DS(on) GS Fast switching speed RoHS compliant Q2 D2 D 5 4 D2 D D1 D 6 3 D1 D Q1 7 2 G2 SO-8 S2 G 8 1 G1 S S1 S Pin 1 SO-8 S Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain-Source Voltage 35 35 V DSS V Drain-Source Avalanche Voltage (maximum) (Note 3) 40 40 V DS(Avalanche) V Gate-Source Voltage V GSS 20 25 I Drain Current - Continuous (Note 1a) 7 5 A D - Pulsed 20 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 40 C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8960C FDS8960C 13 12mm 2500 units 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com FDS8960C Rev C1(W)