X-On Electronics has gained recognition as a prominent supplier of FDS9953A MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDS9953A MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDS9953A ON Semiconductor

FDS9953A electronic component of ON Semiconductor
FDS9953A ON Semiconductor
FDS9953A MOSFETs
FDS9953A  Semiconductors

Images are for reference only
See Product Specifications
Part No. FDS9953A
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET SO-8
A 750V/900V dual high-voltage, 50mA, NPN bJT with excellent hFE linearity.
Datasheet: FDS9953A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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MOQ : 2500
Multiples : 2500
2500 : USD 0.3698
25000 : USD 0.3549
250000 : USD 0.3479
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MOQ : 1
Multiples : 1
1 : USD 1.1841
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MOQ : 1
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1 : USD 1.1841
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MOQ : 2500
Multiples : 2500
2500 : USD 0.401
5000 : USD 0.3609
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MOQ : 1
Multiples : 1
1 : USD 1.2206
10 : USD 0.9677
100 : USD 0.6751
500 : USD 0.5859
1000 : USD 0.499
2500 : USD 0.4672
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MOQ : 2500
Multiples : 2500
2500 : USD 0.299
5000 : USD 0.299
7500 : USD 0.299
10000 : USD 0.299
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Multiples : 771
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MOQ : 1
Multiples : 1
1 : USD 1.5493
10 : USD 0.781
100 : USD 0.4675
250 : USD 0.4426
500 : USD 0.4029
1000 : USD 0.377
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MOQ : 2500
Multiples : 2500
2500 : USD 0.4191
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MOQ : 16
Multiples : 16
16 : USD 0.5098
25 : USD 0.4346
100 : USD 0.4259
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MOQ : 10
Multiples : 1
10 : USD 2.9232
25 : USD 1.4616
50 : USD 1.3154
75 : USD 1.0962
100 : USD 0.9866
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Typical Turn-Off Delay Time
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We are delighted to provide the FDS9953A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDS9953A and other electronic components in the MOSFETs category and beyond.

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FDS9953A is a N-channel field-effect transistor manufactured by ON Semiconductor. It is a discrete power MOSFET optimized for high frequency, high efficiency power switching applications. The device is designed to provide high speed switching and low on-resistance and low gate threshold characteristics. FDS9953A is suitable for high and low side switching, and for use in dc/dc converters and synchronous rectifiers. The maximum drain-source voltage rating is 100V, the maximum continuous drain current is 9A, the maximum pulsed drain current is 14A, and the maximum gate-source voltage is -12V to 20V. It is available in a TO-220F package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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