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It is silicon nitride passivated ion-implanted epi- Max Forward Voltage, VF = 3.4 V ( T = 25C) taxial planar construction. C 600 V Reverse Voltage and High Reliability This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applica- Improved dv/dt Capability tions. Their low stored charge and hyperfast soft recovery mini- mize ringing and electrical noise in many power switching circuits RoHS Compliant reducing power loss in the switching transistors. Applications General Purpose SMPS, Power Switching Circuits Boost Diode in Continuous Mode Power Factor Corrections TO-220-2L 1. Cathode 2. Anode 1. Cathode 2. Anode o Absolute Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter Rating Unit V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R o I Average Rectified Forward Current T = 89 C 8 A F(AV) C Non-repetitive Peak Surge Current I 60 A FSM 60Hz Single Half-Sine Wave o T , T Operating and Storage Temperature Range -65 to +175 C J STG Thermal Characteristics Symbol Parameter Max. Unit o R Maximum Thermal Resistance, Junction to Case 3.6 C/W JC Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFP08S60SNTU FFP08S60SN TO-220-2L Tube N/A N/A 50 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FFP08S60SN Rev. C2