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It is silicon nitride passivated ion-implanted epi- Max Forward Voltage, V = 2.6 V ( T = 25C) F C taxial planar construction. 600 V Reverse Voltage and High Reliability This device is intended for use as freewheeling of boost diode in Avalanche Energy Rated switching power supplies and other power swithching applica- tions. Their low stored charge and hyperfast soft recovery mini- RoHS Compliant mize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Applications General Purpose SMPS, Power Switching Circuits Boost Diode in Continuous Mode Power Factor Corrections Pin Assignments 1 2 TO-220-2L 1. Cathode 2. Anode 1. Cathode 2. Anode Absolute Maximum Ratings Symbol Parameter Rating Unit V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R I Average Rectified Forward Current T = 115 C8 A F(AV) C I Non-repetitive Peak Surge Current 80 A FSM 60Hz Single Half-Sine Wave T T Operating Junction and Storage Temperature - 65 to +175 C J, STG T = 25C unless otherwise noted C Thermal Characteristics Symbol Parameter Max. Unit R Maximum Thermal Resistance, Junction to Case 2.5 C/W JC Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFP08S60STU F08S60S TO-220-2L Tube N/A N/A 50 2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FFP08S60S Rev. C2