FGA20S120M 1200 V, 20 A Shorted-anode IGBT March 2013 FGA20S120M 1200 V, 20 A Shorted-anode IGBT Features General Description High Speed Switching Using advanced field stop trench and shorted-anode technol- ogy, Fairchild s shorted-anode trench IGBTs offer superior con- Low Saturation Voltage: V = 1.55 V I = 20 A CE(sat) C duction and switching performances for soft switching High Input Impedance applications. The device can operate in parallel configuration RoHS Compliant with exceptional avalanche capability. This device is designed for induction heating and microwave oven. Applications Induction Heating, Microwave Oven C G TO-3PN E G C E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description Ratings Unit V Collector to Emitter Voltage 1200 V CES V Gate to Emitter Voltage 25 V GES o Collector Current T = 25 C 40 A C I C o Collector Current T = 100 C 20 A C I Pulsed Collector Current 60 A CM (1) o I Diode Continuous Forward Current 40 A T = 25 C F C o I Diode Continuous Forward Current 20 A T = 100 C F C o Maximum Power Dissipation T = 25 C 348 W C P D o Maximum Power Dissipation T = 100 C 174 W C o T Operating Junction Temperature -55 to +175 C J o T Storage Temperature Range -55 to +175 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case -- 0.43 C/W JC o R (Diode) Thermal Resistance, Junction to Case -- 0.43 C/W JC o R Thermal Resistance, Junction to Ambient -- 40 C/W JA Notes: 1: Limited by Tjmax 2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA20S120M Rev. C0FGA20S120M 1200 V, 20 A Shorted-anode IGBT Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGA20S120M FGA20S120M TO-3PN - - 30 Electrical Characteristics of the IGBT T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV Collector to Emitter Breakdown Voltage V = 0V, I = 2mA 1200 - - V CES GE C I Collector Cut-Off Current V = V , V = 0V - - 1 mA CES CE CES GE I G-E Leakage Current V = V , V = 0V - - 250 nA GES GE GES CE On Characteristics V G-E Threshold Voltage I = 20mA, V = V 4.5 6.0 7.5 V GE(th) C CE GE I = 20A, V = 15V C GE - 1.55 1.85 V o T = 25 C C V Collector to Emitter Saturation Voltage CE(sat) I = 20A, V = 15V, C GE - 1.75 - V o T = 125 C C I = 20A, V = 15V, C GE - 1.85 V o - T = 175 C C o I = 20A, T = 25 C -- 1.7 2.2 V F C V Diode Forward Voltage FM o I = 20A, T = 175 C -- 2.1 - V F C Dynamic Characteristics C Input Capacitance -- 2680 -- pF ies V = 30V V = 0V, CE , GE C Output Capacitance -- 53 -- pF oes f = 1MHz C Reverse Transfer Capacitance -- 43 -- pF res Switching Characcteristics t Turn-On Delay Time - 43 - ns d(on) t Rise Time - 176 - ns r t Turn-Off Delay Time - 310 - ns d(off) V = 600V, I = 20A, CC C R = 10, V = 15V, t Fall Time G GE - 320 480 ns f o Resistive Load, T = 25 C C E Turn-On Switching Loss - 0.52 - mJ on E Turn-Off Switching Loss - 1.43 2.15 mJ off E Total Switching Loss - 1.95 - mJ ts t Turn-On Delay Time - 41 - ns d(on) t Rise Time - 260 - ns r t Turn-Off Delay Time - 345 - ns d(off) V = 600V, I = 20A, CC C R = 10, V = 15V, t Fall Time G GE - 520 - ns f o Resistive Load, T = 175 C C E Turn-On Switching Loss - 0.78 - mJ on E Turn-Off Switching Loss - 1.97 - mJ off E Total Switching Loss - 2.75 - mJ ts Q Total Gate Charge - 208 - nC g V = 600V, I = 20A, CE C Q Gate to Emitter Charge - 18 - nC ge V = 15V GE Q Gate to Collector Charge - 119 - nC gc 2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FGA20S120M Rev. C0