Field Stop Trench IGBT 650 V, 40 A FGAF40S65AQ Description Using novel field stop IGBT technology, ON Semiconductors new series of field stop 4th generation of RC IGBTs offer the optimum performance for PFC applications and welder where low conduction www.onsemi.com and switching losses are essential. Features V I CES C Maximum Junction Temperature: T = 175C J 650 V 40 A Positive Temperature Coefficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: V = 1.6 V (Typ.) I = 40 A CE(sat) C C 100% of the Parts Tested for I (Note 1) LM High Input Impedance G Fast Switching Tighten Parameter Distribution E IGBT with Monolithic Reverse Conducting Diode This Device is PbFree and is RoHS Compliant Applications PFC, Welder TO3PF CASE 340AH ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: May, 2021 Rev. 3 FGAF40S65AQ/DFGAF40S65AQ PACKAGE MARKING AND ORDERING INFORMATION Part Number Device Marking Package Reel Size Tape Width Quantity per Tube FGAF40S65AQ FGAF40S65AQ TO3PF 30 Table 1. ABSOLUTE MAXIMUM RATINGS Symbol Description FGAF40S65AQ Unit V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES Transient Gate to Emitter Voltage 30 V I Collector Current T = 25C 80 A C C T = 100C 40 C I (Note 1) Pulsed Collector Current T = 25C 160 A LM C I (Note 2) Pulsed Collector Current 160 A CM I Diode Forward Current T = 25C 40 A F C T = 100C 20 A C I (Note 2) Pulsed Diode Maximum Forward Current 160 A FM P Maximum Power Dissipation T = 25C 94 W D C T = 100C 47 W C T Operating Junction Temperature Range 55 to +175 C J T Storage Temperature Range 55 to +175 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5 sec 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 400 V, V = 15 V, I = 160 A, R = 7 , Inductive Load. CC GE C G 2. Repetitive rating: Pulse width limited by max. junction temperature. Table 2. THERMAL CHARACTERISTICS Symbol Parameter FGAF40S65AQ Unit R (IGBT) Thermal Resistance, Junction to Case, Max. 1.6 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 C/W JA www.onsemi.com 2