IGBT - Field Stop, Trench 1000 V, 40 A FGH40T100SMD, FGH40T100SMD-F155 Description www.onsemi.com Using innovative field stop trench IGBT technology, ONSemiconductors new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar C inverter, UPS, welder and PFC applications. Features High Current Capability G Low Saturation Voltage: V = 1.9 V(Typ.) I = 40 A CE(sat) C High Input Impedance E Fast Switching E These Devices are PbFree and are RoHS Compliant C GG Applications UPS, Welder, PFC COLLECTOR (FLANGE) TO2473LD TO2473LD CASE 340CK CASE 340CH FGH40T100SMD FGH40T100SMDF155 MARKING DIAGRAM Y&Z&3&K FGH40T100 SMD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40T100SMD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2020 Rev. 4 FGH40T100SMD/DFGH40T100SMD, FGH40T100SMD F155 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Description Symbol Ratings Unit Collector to Emitter Voltage V 1000 V CES Gate to Emitter Voltage V 25 V GES Transient Gate to Emitter Voltage 30 V Collector Current T = 25C I 80 A C C Collector Current T = 100C 40 A C Pulsed Collector Current (Note 1) T = 25C I 120 A C CM Diode Forward Current T = 25C I 80 A C F Diode Forward Current T = 100C 40 A C Pulsed Diode Forward Current (Note 1) T = 25C I 120 A C FM Maximum Power Dissipation T = 25C P 333 W D C Maximum Power Dissipation T = 100C 166 W C Operating Junction Temperature T 55 to +175 C J Storage Temperature Range T 55 to +175 C stg Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Typ Max Unit Thermal Resistance, Junction to Case (IGBT) R 0.45 C/W JC Thermal Resistance, Junction to Case (Diode) R 0.8 C/W JC Thermal Resistance, Junction to Ambient R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FGH40T100SMD FGH40T100SMD TO2473 30 FGH40T100SMD FGH40T100SMDF155 TO2473 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 1 mA 1000 V CES GE C Temperature Coefficient of Breakdown BV / T V = 0 V, I = 250 A 0.6 V/C CES J GE C Voltage Collector CutOff Current I V = V , V = 0 V 1000 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 500 nA GES GE GES CE ON CHARACTERISTICS GE Threshold Voltage V I = 250 A, V = V 4.2 5.3 6.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 40 A, V = 15 V 1.9 2.3 V CE(sat) C GE I = 40 A, V = 15 V, T = 175C 2.4 V C GE C www.onsemi.com 2