Single Channel, DC Sensing Input, Phototransistor Optocoupler In Stretched Body SOP 4-Pin FODM100x Series www.onsemi.com Description The FODM100x Series, single channel, DC sensing input, optocoupler consists of one gallium arsenide (GaAs) infrared light emitting diode optically coupled to one phototransistor, in a stretched body SOP 4pin package. The inputoutput isolation voltage, V , is ISO rated at 5,000 VAC . RMS SSOP4 / LSOP04 CASE 565BH Features 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High Voltage Insulation MARKING DIAGRAM Safety and Regulatory Approvals UL1577, 5,000 VAC for 1 min RMS ON 100x DIN EN/IEC6074755, 890 V Peak Working Voltage VXYYL High Breakdown Collector to Emitter Voltage, BV = 70 V CEO Minimum Extended Industrial Temperate Range, 40 to 110C 100x = Specific Device Code (x = 7, 8, 9) Current Transfer Ratio at I = 5 mA, V = 5 V, T = 25C V = DIN EN/IEC6074755 Option (only F CE A appears on component ordered with FODM1007: 80 to 160% this option) FODM1008: 130 to 260% X = Last Digit Year Code YY = Two Digit Work Week FODM1009: 200 to 400% L = Assembly Package Code These are PbFree Devices Applications PIN CONNECTIONS Primarily Suited for DCDC Converters For Ground Loop Isolation, Signal to Noise Isolation 1 4 ANODE COLLECTOR Communications Adapters, Chargers Consumer Appliances, SetTop Boxes Industrial Power Supplies, Motor Control, Programmable Logic CATHODE 2 3 EMITTER Control Related Resources FODM100x Series SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE <150 V IIV RMS 0110/1.89 Table 1, For Rated Mains Voltage <300 V IIII RMS Climatic Classification 40/110/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , 1,426 V PR IORM PR peak Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 1,671 V IORM PR peak 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 890 V IORM peak V Highest Allowable OverVoltage 6.000 V IOTM peak External Creepage 8.0 mm External Clearance 8.0 mm DTI Distance Through Insulation (Insulation Thickness) 0.4 mm T Case Temperature (Note 1) 150 C S I Input Current (Note 1) 200 mA S,INPUT P Output Power (Note 1) 300 mW S,OUTPUT 9 R Insulation Resistance at T , V = 500 V (Note 1) >10 IO S IO 1. Safety limit values maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise noted) A Symbol Parameter Value Unit TOTAL PACKAGE T Storage Temperature 55 to +150 C STG T Operating Temperature 40 to +110 C OPR T Junction Temperature 40 to +125 C J EMITTER I Continuous Forward Current 50 mA F(avg) I Continuous Forward Current (1 s Pulse, 300 pps) 1 A F(pk) V Reverse Input Voltage 6 V R PD LED Power Dissipation T = 25C (Note 2) 100 mW LED A Derate Above 25C 0.9 mW/C DETECTOR I Continuous Collector Current 50 mA C V CollectorEmitter Voltage 70 V CEO V EmitterCollector Voltage 7 V ECO PD Detector Power Dissipation T = 25C (Note 2) 150 mW C A Derate Above 25C 1.47 mW/C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. www.onsemi.com 2