DATA SHEET www.onsemi.com 4-Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers MFP4 FODM3011, FODM3012, CASE 100AP FODM3022, FODM3023, FODM3052, FODM3053 MARKING DIAGRAM Description The FODM301X, FODM302X, and FODM305X series consists 3011 of a GaAs infrared emitting diode driving a silicon bilateral switch VXYYR housed in a compact 4pin miniflat package. The lead pitch is 2.54mm. They are designed for interfacing between electronic 3011 = Specific Device Code controls and power triacs to control resistive and inductive loads V = DIN EN/IEC6074755 Option (only for 115 V/240 V operations. appears on component ordered with this option) Features X = One Digit Year Code, e.g., 6 YY = Digit Work Week, Ranging from 01 to 53 Compact 4pin Surface Mount Package R = Assembly Package Code (2.4 mm Maximum Standoff Height) Peak Blocking Voltage 250 V (FODM301X) FUNCTIONAL SCHEMATIC 400 V (FODM302X) 600 V (FODM305X) MAIN ANODE 1 4 Safety and Regulatory Approvals: TERMINAL UL1577, 3,750 VAC for 1 Minute RMS DINEN/IEC6074755, 565 V Peak Working MAIN 2 3 Insulation Voltage CATHODE TERMINAL These are PbFree Devices Applications Industrial Controls ORDERING INFORMATION See detailed ordering and shipping information on page 8 of Traffic Lights this data sheet. Vending Machines Solid State Relay Lamp Ballasts Solenoid/Valve Controls Static AC Power Switch Incandescent Lamp Dimmers Motor Control Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: October, 2021 Rev. 3 FODM3053NF098/DFODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM3053 SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE <150 V IIV RMS 0110/1.89 Table 1, For Rated Mains Voltage <300 V IIII RMS Climatic Classification 40/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , 904 V PR IORM PR peak Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 1060 V IORM PR peak 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 565 V IORM peak V Highest Allowable OverVoltage 6000 V IOTM peak External Creepage 5 mm External Clearance 5 mm DTI Distance Through Insulation (Insulation Thickness) 0.4 mm T Case Temperature (Note 1) 150 C S I Input Current (Note 1) 200 mA S,INPUT P Output Power (Note 1) 300 mW S,OUTPUT 9 R Insulation Resistance at T , V = 500 V (Note 1) >10 IO S IO 1. Safety limit values maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise noted) A Symbol Parameter Value Unit TOTAL PACKAGE T Storage Temperature 55 to +150 C STG T Operating Temperature 40 to +100 C OPR T Junction Temperature 40 to +125 C J T Lead Solder Temperature 260 for 10 s C SOL EMITTER I Continuous Forward Current 60 mA F(avg) V Reverse Input Voltage 3 V R P Power Dissipation (No Derating Required over Operating Temp. Range) 100 mW D DETECTOR I Peak NonRepetitive Surge Current (Single Cycle 60 Hz Sine Wave) 1 A TSM (PEAK) I OnState RMS Current 70 mA TM(RMS) (RMS) V FODM3011, FODM3012 250 V OffState Output Terminal Voltage DRM FODM3022, FODM3023 400 FODM3052, FODM3053 600 P Power Dissipation (No Derating Required over Operating Temp. Range) 300 mW D Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2