DATA SHEET www.onsemi.com OptoHiT Series, HALFPITCH MINIFLAT High-Temperature Phototransistor Optocoupler in Half-Pitch MFP4 2.5 x 4.4, 1.27P Mini-Flat 4-Pin Package CASE 100AL FODM8801A, FODM8801B, MARKING DIAGRAM FODM8801C ON 8801x Description VXYYM In the OptoHiT series, the FODM8801 is a first of kind phototransistor, utilizing onsemis leadingedge proprietary process technology to achieve high operating temperature characteristics, up 8801x = Specific Device Code (x = A, B, C) V = DIN EN/IEC6074755 Option (only to 125C. The optocoupler consists of an aluminum gallium arsenide appears on component ordered with (AlGaAs) infrared lightemitting diode (LED) optically coupled to a this option) phototransistor, available in a compact halfpitch, mini flat, 4pin X = OneDigit Year Code package. It delivers high current transfer ratio at very low input YY = Digit Work Week current. The inputoutput isolation voltage, V , is rated at 3750 M = Assembly Package Code ISO VAC . RMS PIN CONNECTIONS Features Utilizing Proprietary Process Technology to Achieve High Operating Temperature: Up to 125C 1 4 ANODE COLLECTOR Guaranteed Current Transfer Ratio (CTR) Specifications Across Full Temperature Range Excellent CTR Linearity at HighTemperature CATHODE 2 3 EMITTER CTR at Very Low Input Current, I F High Isolation Voltage Regulated by Safety Agency: CUL / UL1577, 3750 VAC for 1 Minute and RMS DIN EN/IEC6074755 ORDERING INFORMATION Compact HalfPitch, MiniFlat, 4Pin Package See detailed ordering and shipping information on page 9 of this data sheet. (1.27 mm Lead Pitch, 2.4 mm Maximum Standoff Height) >5 mm Creepage and Clearance Distance Applicable to Infrared Ray Reflow, 245C These are PbFree Devices Applications Primarily Suited for DCDC Converters GroundLoop Isolation, SignalNoise Isolation Communications Adapters, Chargers Consumer Appliances, SetTop Boxes Industrial Power Supplies, Motor Control, Programmable Logic Control Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: October, 2021 Rev. 5 FODM8801A/DFODM8801A, FODM8801B, FODM8801C SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE <150 V IIV RMS 0110/1.89 Table 1, For Rated Mains Voltage <300 V IIII RMS Climatic Classification 40/125/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , 848 V PR IORM PR peak Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 1060 V IORM PR peak 100% Production Test with t = 1 s, Partial Discharge <5 pC m V Maximum Working Insulation Voltage 565 V IORM peak V Highest Allowable OverVoltage 6000 V IOTM peak External Creepage 5 mm External Clearance 5 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm T Case Temperature (Note 1) 150 C S I Input Current (Note 1) 200 mA S,INPUT P Output Power (Note 1) 300 mW S,OUTPUT 9 R Insulation Resistance at T , V = 500 V (Note 1) >10 IO S IO 1. Safety limit values maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise noted) A Symbol Parameter Value Unit TOTAL PACKAGE T Storage Temperature 40 to +150 C STG T Operating Temperature 40 to +125 C OPR T Junction Temperature 40 to +140 C J T Lead Solder Temperature 245 for 10 s C SOL EMITTER IF Continuous Forward Current 20 mA (average) V Reverse Input Voltage 6 V R PD Power Dissipation (Note 2, 4) 40 mW LED DETECTOR IC Continuous Collector Current 30 mA (average) V CollectorEmitter Voltage 75 V CEO V EmitterCollector Voltage 7 V ECO PD Collector Power Dissipation (Note 3, 4) 150 mW C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Derate linearly from 73C at a rate of 0.24 mW/C. 3. Derate linearly from 73C at a rate of 2.23 mW/C. 4. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. www.onsemi.com 2