BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES Package type: leaded Package form: T- Dimensions (in mm): 1.8 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 40 Compliant to RoHS Directive 2002/95/EC and in 94 8638 accordance to WEEE 2002/96/EC Note ** Please see document Vishay Material Category Policy: www.vishay.com/doc 99902 DESCRIPTION APPLICATIONS BPW16N is a silicon NPN phototransistor with high radiant Detector in electronic control and drive circuits sensitivity in clear, T- plastic package with flat window. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch. PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.1 BPW16N 0.14 40 450 to 1040 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW16N Bulk MOQ: 5000 pcs, 5000 pcs/bulk T- Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 32 V CEO Emitter collector voltage V 5V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation T 55 C P 100 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 3 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 450 K/W thJA Rev. 1.8, 24-Aug-11 Document Number: 81515 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPW16N www.vishay.com Vishay Semiconductors 125 100 75 R = 450 K/W thJA 50 25 0 100 020 40 60 80 94 8308 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 1 mA V 32 V C (BR)CEO Collector emitter dark current V = 20 V, E = 0 I 1200 nA CE CEO Collector emitter capacitance V = 5 V, f = 1 MHz, E = 0 C 8pF CE CEO 2 E = 1 mW/cm , = 950 nm, e Collector light current I 0.07 0.14 mA ca V = 5 V CE Angle of half sensitivity 40 deg Wavelength of peak sensitivity 825 nm p Range of spectral bandwidth 450 to 1040 nm 0.1 2 E = 1 mW/cm , = 950 nm, e Collector emitter saturation voltage V 0.3 V CEsat I = 0.01 mA C Turn-on time V = 5 V, I = 5 mA, R = 100 t 4.8 s S C L on Turn-off time V = 5 V, I = 5 mA, R = 100 t 5.0 s S C L off Cut-off frequency V = 5 V, I = 5 mA, R = 100 f 120 kHz S C L c BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 4 2.0 10 1.8 V = 5 V CE 3 10 2 1.6 E = 1 mW/cm e = 950 nm V = 20 V 1.4 CE 2 10 1.2 1.0 1 10 0.8 0 10 0.6 100 0 20 40 60 80 100 20 40 60 80 T - Ambient Temperature (C) 94 8235 94 8239 T - Ambient Temperature (C) amb amb Fig. 1 - Collector Dark Current vs. Ambient Temperature Fig. 2 - Relative Collector Current vs. Ambient Temperature Rev. 1.8, 24-Aug-11 Document Number: 81515 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Collector Dark Current (nA) CEO P - Power Dissipation (mW) V I - Relative Collector Current ca rel