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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 80 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 0 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and Low Crss (Typ. 530 pF) high avalanche energy strength. These devices are suitable 100% Avalanche Tested for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. 17 D G G D TO-3PN S S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQA160N08 Unit V Drain-Source Voltage 80 V DSS I - Continuous (T = 25C) Drain Current 160 A D C - Continuous (T = 100C) 113 A C I (Note 1) Drain Current - Pulsed 640 A DM V Gate-Source Voltage 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 1600 mJ AS I Avalanche Current (Note 1) 160 A AR E (Note 1) Repetitive Avalanche Energy 37.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns P Power Dissipation (T = 25C) 375 W D C - Derate above 25C 2.5 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds. Thermal Characteristics FQA160N08 + Thermal Resistance, Junction-to-Case, Max. 0.4 6 + 40 6 Thermal Resistance, Junction-to-Ambient, Max. 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQA160N08 Rev. C2