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V = 10 V DS(on) GS transistors are produced using Fairchilds proprietary, planar Low Gate Charge (Typ. 35 nC) stripe, DMOS technology. This advanced technology has been Low C (Typ. 12 pF) especially tailored to minimize on-state resistance, provide rss superior switching performance, and withstand high energy Fast Switching pulse in the avalanche and commutation mode. These devices 100% Avalanche Tested are well suited for high efficiency switch mode power supplies. Improved dv/dt Capability D D G G 2 S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQB8N90CTM Unit V Drain-Source Voltage 900 V DSS I - Continuous (T = 25C) Drain Current 6.3 A D C - Continuous (T = 100C) 3.8 A C I Drain Current - Pulsed (Note 1) 25 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 850 mJ AS I Avalanche Current (Note 1) 6.3 A AR E Repetitive Avalanche Energy (Note 1) 17.1 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25C) 171 W D C - Derate Above 25C 1.37 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds. 300 C L Thermal Characteristics Symbol Parameter FQB8N90CTM Unit R Thermal Resistance, Junction-to-Case, Max. 0.73 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 40 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQB8N90C Rev. C1