FQD18N20V2 N-Channel QFET MOSFET January 201 4 FQD18N20V2 N-Channel QFET MOSFET 200 V, 15 A, 140 m Description Features This N-Channel enhancement mode power MOSFET is 15 A, 200 V, R = 140 m (Max.) V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 7.5 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 20 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 25 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G G S D-PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQD18N20V2TM Unit V Drain-Source Voltage 200 V DSS I - Continuous (T = 25C) Drain Current 15 A D C - Continuous (T = 100C) 9.75 A C I Drain Current - Pulsed (Note 1) 60 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 340 mJ AS I Avalanche Current (Note 1) 15 A AR E (Note 1) Repetitive Avalanche Energy 8.3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns Power Dissipation (T = 25C) * 2.5 W P A D Power Dissipation (T = 25C) 83 W C - Derate above 25C 0.67 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Lemperature for Loldering, T 300 C L 1/8 from Case for 5 Seconds. Thermal Characteristics Symbol Parameter Unit FQD18N20V2TM R Thermal Resistance, Junction to Case, Max. 1.5 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQD18N20V2 Rev. C2 FQD18N20V2 N-Channel QFET MOSFET Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity DV218N20 DPAK Tape and Reel 330 mm 16 mm 2500 units FQD18N20V2TM Electrical Characteristics T = 25C unless otherwise noted. C Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV V = 0 V, I = 250 A Drain-Source Breakdown Voltage 200 -- -- V DSS GS D BV Breakdown Voltage Temperature DSS I = 250 A, Referenced to 25C -- 0.25 -- V/C D / T Coefficient J I V = 200 V, V = 0 V -- -- 1 A DSS DS GS Zero Gate Voltage Drain Current V = 160 V, T = 125C -- -- 10 A DS C I Gate-Body Leakage Current, Forward V = 30 V, V = 0 V -- -- 100 nA GSSF GS DS I V = -30 V, V = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA GSSR GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250 A 3.0 -- 5.0 V GS(th) DS GS D R Static Drain-Source DS(on) V = 10 V, I = 7.5 A -- 0.12 0.14 GS D On-Resistance g Forward Transconductance V = 40 V, I = 7.5 A -- 11 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 830 1080 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance -- 200 260 pF oss f = 1.0 MHz C Reverse Transfer Capacitance -- 25 33 pF rss V = 160 V, V = 0 V, DS GS C Output Capacitance -- 70 -- pF oss f = 1.0 MHz C eff. V = 0V to 160 V, V = 0 V Effective Output Capacitance -- 135 -- pF oss DS GS Switching Characteristics t Turn-On Delay Time -- 16 40 ns d(on) V = 100 V, I = 18 A, DD D t Turn-On Rise Time -- 133 275 ns r R = 25 G t Turn-Off Delay Time -- 38 85 ns d(off) (Note 4) t Turn-Off Fall Time -- 62 135 ns f Q Total Gate Charge -- 20 26 nC g V = 160 V, I = 18 A, DS D Q Gate-Source Charge -- 5.6 -- nC V = 10 V gs GS Q (Note 4) Gate-Drain Charge -- 10 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 15 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A SM V Drain-Source Diode Forward Voltage V = 0 V, I = 15 A -- -- 1.5 V SD GS S t Reverse Recovery Time V = 0 V, I = 18 A, -- 158 -- ns rr GS S Q dI / dt = 100 A/s Reverse Recovery Charge -- 1.0 -- C F rr Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 1.58 mH, I = 18 A, V = 50 V, R = 25 , starting T = 25C. AS DD G J 3. I 18 A, di/dt 200 A/s, V BV starting T = 25C. SD DD DSS, J 4. Essentially independent of operating temperature. 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FQD18N20V2 Rev. C2