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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = 7.8 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 19 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior Low Crss (Typ. 32 pF) switching performance and high avalanche energy 100% Avalanche Tested strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. D D G G S D-PAK S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQD19N10 TM Unit V Drain-Source Voltage 100 V DSS I Drain Current - Continuous (T = 25C) 15.6 A D C - Continuous (T = 100C) 9.8 A C I Drain Current - Pulsed (Note 1) 62.4 A DM V Gate-Source Voltage 25 V GSS E Single Pulsed Avalanche Energy (Note 2) 220 mJ AS I (Note 1) Avalanche Current 15.6 A AR E Repetitive Avalanche Energy (Note 1) 5.0 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 6.0 V/ns Power Dissipation (T = 25C) * P 2.5 W A D Power Dissipation (T = 25C) 50 W C - Derate above 25C 0.4 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQ D19 N10 TM Unit R Thermal Resistance, Junction to Case, Max . 2.5 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQD19N10 Rev. 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