FQD2N80TM ON Semiconductor

FQD2N80TM electronic component of ON Semiconductor
FQD2N80TM ON Semiconductor
FQD2N80TM MOSFETs
FQD2N80TM  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FQD2N80TM MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQD2N80TM MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.FQD2N80TM
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:MOSFET 800V N-Channel QFET
Datasheet:FQD2N80TM Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 1.5819 ea
Line Total: USD 1.58 
Availability : 0
  
QtyUnit Price
1$ 1.5819
10$ 1.3645
30$ 1.244
100$ 1.1106
500$ 1.0503
1000$ 1.0223
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.3699
5000$ 0.3699
7500$ 0.3699
10000$ 0.3699


Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5819
10$ 1.3645
30$ 1.244
100$ 1.1106
500$ 1.0503
1000$ 1.0223


Availability0
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.36
10$ 1.2625
100$ 0.9408
500$ 0.7776
1000$ 0.6144
2500$ 0.5772


Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 17
Multiples : 1
QtyUnit Price
17$ 0.7204


Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 17
Multiples : 1
QtyUnit Price
17$ 0.675
25$ 0.5581
100$ 0.547

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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We are delighted to provide the FQD2N80TM from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQD2N80TM and other electronic components in the MOSFETs category and beyond.

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The FQD2N80TM with MOSFET 800V N-Channel QFET is a power MOSFET manufactured ON Semiconductor. It is a dual N-channel enhancement type MOSFET designed for improved surface mount switching applications and is ideal for low impedance applications. Featuring a breakdown voltage of 800V, the FQD2N80TM has fast switching speed with low gate charge, allowing faster switching times and higher drive currents in most applications. Additionally, its maximum RDS(ON) of 1.4mOhm, and its toggle mode in enhanced Gate D-S resistance allows higher Power Conversion Efficiency. This device is available in TO-252 (DPAK) package option making it suitable for power management applications, such as switching motor controls, regulators, and load switching.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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