FQD2N80TM ON Semiconductor

FQD2N80TM electronic component of ON Semiconductor
FQD2N80TM ON Semiconductor
FQD2N80TM MOSFETs
FQD2N80TM  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FQD2N80TM MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQD2N80TM MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FQD2N80TM
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 800V N-Channel QFET
Datasheet: FQD2N80TM Datasheet (PDF)
Price (USD)
1: USD 1.4237 ea
Line Total: USD 1.42 
Availability : 0
  
QtyUnit Price
1$ 1.4237
10$ 1.2281
30$ 1.1196
100$ 0.9996
500$ 0.9453
1000$ 0.9201

Availability 0
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.6553


Availability 0
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3532


Availability 0
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.2852
10$ 1.1416
100$ 0.8996
500$ 0.6978
1000$ 0.5511


Availability 0
Ship by Tue. 12 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.024
10$ 1.1363
100$ 0.8467
500$ 0.6999
1000$ 0.553
2500$ 0.5195


Availability 0
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.3329
5000$ 0.3329
7500$ 0.3329
10000$ 0.3329


Availability 0
Ship by Thu. 21 Aug to Tue. 26 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.4237
10$ 1.2281
30$ 1.1196
100$ 0.9996
500$ 0.9453
1000$ 0.9201


Availability 0
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 839
Multiples : 1
QtyUnit Price
839$ 0.3766


Availability 0
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 17
Multiples : 1
QtyUnit Price
17$ 0.6483


Availability 0
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 17
Multiples : 1
QtyUnit Price
17$ 0.6075
25$ 0.5023
100$ 0.4923

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FQD2N80TM from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQD2N80TM and other electronic components in the MOSFETs category and beyond.

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The FQD2N80TM with MOSFET 800V N-Channel QFET is a power MOSFET manufactured ON Semiconductor. It is a dual N-channel enhancement type MOSFET designed for improved surface mount switching applications and is ideal for low impedance applications. Featuring a breakdown voltage of 800V, the FQD2N80TM has fast switching speed with low gate charge, allowing faster switching times and higher drive currents in most applications. Additionally, its maximum RDS(ON) of 1.4mOhm, and its toggle mode in enhanced Gate D-S resistance allows higher Power Conversion Efficiency. This device is available in TO-252 (DPAK) package option making it suitable for power management applications, such as switching motor controls, regulators, and load switching.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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