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V = - 10 V, DS(on) GS produced using Fairchild Semiconductor s proprietary I = - 2.7 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 6.3 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching Low Crss (Typ. 25 pF) performance and high avalanche energy strength. These 100% Avalanche Tested devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S D G G D-PAK S D Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQD7P06 Unit V Drain-Source Voltage -60 V DSS I - Continuous (T = 25C) Drain Current -5.4 A D C - Continuous (T = 100C) -3.42 A C I (Note 1) Drain Current - Pulsed -21.6 A DM V Gate-Source Voltage 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 90 mJ AS I Avalanche Current (Note 1) -5.4 A AR E (Note 1) Repetitive Avalanche Energy 2.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns Power Dissipation (T = 25C) * 2.5 W P A D Power Dissipation (T = 25C) 28 W C - Derate above 25C 0.22 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQD7P06 Unit R Thermal Resistance, Junction-to-Case, Max. 4.5 C/W JC R Thermal Resistance, Junction-to-Ambient * 50 C/W JA R Thermal Resistance, Junction-to-Ambient, Max. 110 C/W JA * When mounted on the minimum pad size recommended (PCB Mount) 2001 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQD7P06 Rev. C0