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V = -10 V, DS(on) GS transistors are produced using Fairchilds proprietary, I = -5.75 A D planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 21 nC) technology has been especially tailored to minimize on- Low Crss (Typ. 65 pF) state resistance, provide superior switching performance, 100% Avalanche Tested and withstand high energy pulse in the avalanche and o 175 C Maximum Junction Temperature Rating commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. S G G D S TO-220 D o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQP12P10 Unit V Drain-Source Voltage -100 V DSS I Drain Current - Continuous (T = 25C) -11.5 A D C - Continuous (T = 100C) -8.1 A C I Drain Current - Pulsed (Note 1) -46 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 370 mJ AS I (Note 1) Avalanche Current -11.5 A AR E Repetitive Avalanche Energy (Note 1) 7.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt -6.0 V/ns P Power Dissipation (T = 25C) 75 W D C - Derate above 25C 0.5 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQP12P10 Unit R Thermal Resistance, Junction-to-Case, Max. 2.0 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.5 C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP12P10 Rev. C0