MOSFET - N-Channel QFET 600 V, 3.4 , 3.0 A FQP3N60C General Description This NChannel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially www.onsemi.com tailored to reduce onstate resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power V R MAX I MAX DS DS(ON) D factor correction (PFC), and electronic lamp ballasts. 600 V 3.4 10 V 3.0 A Features 3.0 A, 600 V, R = 3.4 (Max.) at V = 10 V, I = 1.5 A DS(on) GS D D Low Gate Charge (Typ. 10.5 nC) Low C (Typ. 5.0 pF) rss 100% Avalanche Tested This is a PbFree Device G ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Ratings Unit S V DrainSource Voltage 600 V DSS NChannel MOSFET V GateSource Voltage 30 V GSS I Drain Current Continuous (T = 25C) 3 A D C Continuous (T = 100C) 1.8 C I Drain Current Pulsed (Note 1) 12 A G DM D S E Single Pulse Avalanche Energy (Note 2) 150 mJ AS TO2203LD CASE 340AT I Avalanche Current (Note 1) 3 A AR E Repetitive Avalanche Energy (Note 1) 7.5 mJ AR MARKING DIAGRAM dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power (T = 25C) 75 W D C Dissipation Derate above 25C 0.62 W/C Y&Z&3&K T , T Operating and Storage Temperature 55 to C J STG FQP Range +150 3N60C T Maximum Lead Temperature for 300 C L Soldering, 1/8 from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y = ON Semiconductor Logo 1. Repetitive rating: pulsewidth limited by maximum junction temperature &Z = Assembly Plant Code 2. L = 30 mH, I = 3 A, V = 50 V, R = 25 , starting T = 25C AS DD G J &3 = Data Code (Year & Week) 3. I 3 A, di/dt 200 A/ s, V BV , starting T = 25C SD DD DSS J &K = Lot Code FQP3N60C = Specific Device Code THERMAL CHARACTERITICS Symbol Parameter Ratings Unit ORDERING INFORMATION R Maximum Thermal Resistance, 1.67 C/W JC Junction to Case Device Package Shipping R Maximum Thermal Resistance, 62.5 C/W JA FQP3N60C TO2203LD 50 Units/ Junction to Ambient (PbFree) Tube Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: June, 2021 Rev. 6 FQP3N60C/DFQP3N60C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min. Typ. Max. Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage V = 0 V, I = 250 A 600 V DSS GS D BV Breakdown Voltage Temperature I = 250 A, Referenced to 25C 0.6 V/C DSS D Coefficient / T J I Zero Gate Voltage Drain Current V = 600 V, V = 0 V 1 A DSS DS GS V = 480 V, T = 125 C 10 DS C I Gate Body Leakage Current, Forward V = 30 V, V = 0 V 100 nA GSSF GS DS I Gate Body Leakage Current, Reverse V = 30 V, V = 0 V 100 nA GSSR GS DS ON CHARACTERISTICS V Gate Threshold Voltage V = V , I = 250 A 2.0 4.0 V GS(th) GS DS D R Static DrainSource OnResistance V = 10 V, I = 1.5 A 2.8 3.4 DS(on) GS D g Forward Transconductance V = 40 V, I = 1.5 A 3.5 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 25 V, V = 0 V, f = 1.0 MHz 435 565 pF iss DS GS C Output Capacitance 45 60 pF oss C Reverse Transfer Capacitance 5 8 pF rss SWITCHING CHARACTERISTICS t Turn-On Delay Time V = 300 V, I = 3 A, 12 34 ns d(on) DD D R = 25 G t TurnOn Rise Time 30 70 ns r (Note 4) t Turn-Off Delay Time 35 80 ns d(off) t TurnOff Fall Time 35 80 ns f Q Total Gate Charge V = 480 V, I = 3 A V = 10 V 10.5 14 nC g DS D , GS (Note 4) Q GateSource Charge 2.1 nC gs Q GateDrain Charge 4.5 nC gd DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous DrainSource Diode Forward Current 3 A S I Maximum Pulsed DrainSource Diode Forward Current 12 A SM V DrainSource Diode Forward Voltage V = 0 V, I = 3 A 1.4 V SD GS S t Reverse Recovery Time V = 0 V, I = 3 A, 260 ns rr GS S dI /dt = 100 A/ s F Q Reverse Recovery Charge 1.6 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature. www.onsemi.com 2