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This literature is subject to all applicable copyright laws and is not for resale in any manner.FQP6N60C/FQPF6N60C QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 600V, R = 2.0 V = 10 V DS(on) GS transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 7 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D G TO-220 TO-220F G D S G D S FQPF Series FQP Series S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQP6N60C FQPF6N60C Units V Drain-Source Voltage 600 V DSS I - Continuous (T = 25C) Drain Current 5.5 5.5 * A D C - Continuous (T = 100C) 3.3 3.3 * A C I (Note 1) Drain Current - Pulsed 22 22 * A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 300 mJ AS I Avalanche Current (Note 1) 5.5 A AR E (Note 1) Repetitive Avalanche Energy 12.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 125 40 W D C - Derate above 25C 1.0 0.31 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP6N60C FQPF6N60C Units R Thermal Resistance, Junction-to-Case 1.0 3.2 C/W JC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W CS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W JA 2004 Fairchild Semiconductor Corporation Rev. A, March 2004