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V =-10 V, I =- 4 A DS(on) GS D produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 12 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 30 pF) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior 100% Avalanche Tested switching performance and high avalanche energy 175C Maximum Junction Temperature Rating strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. D G G D TO-220 S S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQP8P10 Unit V Drain-Source Voltage -100 V DSS I - Continuous (T = 25C) Drain Current -8.0 A D C - Continuous (T = 100C) -5.7 A C I (Note 1) Drain Current - Pulsed -32 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 150 mJ AS I Avalanche Current (Note 1) -8.0 A AR E (Note 1) Repetitive Avalanche Energy 6.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns P Power Dissipation (T = 25C) 65 W D C - Derate above 25C 0.43 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Unit R Thermal Resistance, Junction-to-Case -- 2.31 C/W JC R Thermal Resistance, Case-to-Sink 0.5 -- C/W CS R Thermal Resistance, Junction-to-Ambient -- 62.5 C/W JA www.fairchildsemi.com 200 2 Fairchild Semiconductor Corporation FQP 8P10 Rev. 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