AOD409/AOI409 60V P-Channel MOSFET General Description Product Summary V Trench Power MV MOSFET technology DS -60V Low R I (at V =-10V) -26A DS(ON) D GS Low Gate Charge R (at V =-10V) < 40m DS(ON) GS Optimized for fast-switching applications R (at V =-4.5V) < 55m DS(ON) GS Applications 100% UIS Tested 100% Rg Tested Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications TO252 TO-251A DPAK IPAK Top View Bottom View Top View Bottom View D D D D D G S G S S G S G D D G S Orderable Part Number Package Type Form Minimum Order Quantity AOD409 TO-252 Tape & Reel 2500 AOI409 TO-251A Tube 4000 Absolute Maximum Ratings T =25C unless otherwise noted A PPaarraamemetteerr SSyymbmbooll MMaaxxiimumumm UUnniittss Drain-Source Voltage V -60 V DS Gate-Source Voltage V 20 V GS T =25C -26 C Continuous Drain I D T =100C Current -18 A C C Pulsed Drain Current I -80 DM C Avalanche Current I -26 A AS C Avalanche energy L=0.1mH E 34 mJ AS T =25C 60 C P W D B T =100C Power Dissipation 30 C T =25C 2.5 A P W DSM A T =70C Power Dissipation 1.6 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 16.7 25 C/W R A D JA Maximum Junction-to-Ambient Steady-State 40 50 C/W Steady-State Maximum Junction-to-Case R 1.9 2.5 C/W JC Rev.6.0: October 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =-250A, VGS=0V BV Drain-Source Breakdown Voltage -60 V DSS D V =-48V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J I Gate-Body leakage current V =0V, V =20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =-250A -1.2 -1.9 -2.4 V GS(th) DS GS, D I V =-10V, V =-5V On state drain current -80 A D(ON) GS DS V =-10V, I =-20A 32 40 GS D m R Static Drain-Source On-Resistance T =125C 53 DS(ON) J V =-4.5V, I =-20A 43 55 m GS D g Forward Transconductance V =-5V, I =-20A 32 S DS D FS I =-1A,V =0V V Diode Forward Voltage -0.73 -1 V SD S GS I Maximum Body-Diode Continuous Current -30 A S DYNAMIC PARAMETERS C Input Capacitance 2977 3600 pF iss V =0V, V =-30V, f=1MHz C Output Capacitance 241 pF GS DS oss C Reverse Transfer Capacitance 153 pF rss R Gate resistance f=1MHz 2 2.4 g SWITCHING PARAMETERS Q (10V) Total Gate Charge 44 54 nC g Q (4.5V) Total Gate Charge 22.2 28 nC g V =-10V, V =-30V, I =-20A GS DS D Q Gate Source Charge 9 nC gs Q Gate Drain Charge 10 nC gd t Turn-On DelayTime 12 ns D(on) t Turn-On Rise Time V =-10V, V =-30V, R =1.5, 14.5 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 3388 nnss GGEENN DD((ooffff)) t Turn-Off Fall Time 15 ns f t I =-20A, dI/dt=100A/s 40 rr Body Diode Reverse Recovery Time F 50 ns Q I =-20A, dI/dt=100A/s 59 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The Power JA A dissipation P is based on R t 10s and the maximum allowed junction temperature of 150 C. The value in any given application depends on DSM JA the user s specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =175 C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.6.0: October 2014 www.aosmd.com Page 2 of 6