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V =-10 V, I = -7.5 A DS(on) GS D produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 29 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 110 pF) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior 100% Avalanche Tested switching performance and high avalanche energy 175C Maximum Junction Temperature Rating strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S G G D G D S TO-220 S TO-220F D Absolute Maximum Ratings T = 25C unless otherwise noted . C Symbol Parameter FQP15P12 FQPF15P12 Unit V Drain-Source Voltage -120 V DSS I - Continuous (T = 25C) Drain Current -15 -15 * A D C - Continuous (T = 100C) -10.6 -10.6 * A C I (Note 1) Drain Current - Pulsed -60 -60 * A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 1157 mJ AS I Avalanche Current (Note 1) -15 A AR E Repetitive Avalanche Energy (Note 1) 10 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.0 V/ns P Power Dissipation (T = 25C) 100 41 W D C - Derate above 25C 0.67 0.27 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP15P12 FQPF15P12 Unit R Thermal Resistance, Junction-to-Case 1.5 3.66 C/W JC R Thermal Resistance, Case-to-Sink Typ. 40 -- C/W JS R Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W JA www.fairchildsemi.com 2003 Fairchild Semiconductor Corporation 1 FQP15P12 / FQPF15P12 Rev. C 2