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FQPF16N25C N-Channel QFET MOSFET November 2013 FQPF16N25C N-Channel QFET MOSFET 250 V, 15.6 A, 270 m Features Description 15.6 A, 250 V, R = 270 m (Max) V = 10 V, This N-Channel enhancement mode power MOSFET is pro- DS(on) GS I = 7.8 A duced using Fairchild Semiconductors proprietary planar stripe D and DMOS technology. This advanced MOSFET technology Low Gate Charge (Typ. 41 nC) has been especially tailored to reduce on-state resistance, and Low Crss (Typ. 68 pF) to provide superior switching performance and high avalanche 100% Avalanche Tested energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and elec- tronic lamp ballasts. D G G D S TO-220F S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQPF16N25C Unit V V Drain to Source Voltage 250 DSS o A - Continuous (T = 25 C) 15.6 * C I Drain Current D o A - Continuous (T = 100 C) 9.8 * C A I Drain Current - Pulsed (Note 1) 62.4 * DM V V Gate to Source Voltage 30 GSS mJ E Single Pulsed Avalanche Energy (Note 2) 410 AS A I Avalanche Current (Note 1) 15.6 AR mJ E Repetitive Avalanche Energy (Note 1) 13.9 AR V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 o W (T = 25 C) 43 C P Power Dissipation D o W/C - Derate Above 25C0.34 C T , T Operating and Storage Temperature Range -55 to +150 J STG Maximum Lead Temperature for Soldering, C T 300 L 1/8 from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQPF16N25C Unit 2.89 C/W R Thermal Resistance, Junction to Case, Max JC R Thermal Resistance, Junction to Ambient, Max 62.5 C/W JA 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQPF16N25C Rev. C1