Schottky Rectifier 10 A, 60 V UltraLow VF FSV1060V Description The FSV1060V schottky rectifier offers breakthrough size and performance. The device is optimized for mobile charger applications. www.onsemi.com It sinks only 13 mA reverse current at high temperature and provides forward voltage drop of 0.2 V at 1 A operating current in a charger Anode 1 design. All this capability is packed into a small, flatlead, TO277 Anode 2 3. Cathode package, optimized for spaceconstrained applications. The FSV1060V supports a typical Z height of 1.1 mm. It is RoHS Schottky Rectifier compliant and halogen free. It is also qualified for a wave soldering process. 3 Features UltraLow Forward Voltage Drop: 0.47 V Typical at 10 A, T = 25C A 2 0.52 V Maximum at 10 A, T = 25C 1 A Low Thermal Resistance TO2773LD Very Low Profile: Typical Height of 1.1 mm CASE 340BQ Meets MSL 1 per JESD22A111 FullBody Solder Immersion NonDAP Option Only MARKING DIAGRAM These Devices are PbFree, Halogen Free and are RoHS Compliant Applications Y&Z&3 FSV1060V Mobile Charger Solar Panel Reverse Polarity Protection Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Date Code (Year & Week) FSV1060V = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: April, 2020 Rev. 1 FSV1060V/DFSV1060V Specifications ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) (Note 1) A Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 60 V RRM V Working Peak Reverse Voltage 60 V RWM V RMS Reverse Voltage 42 V RMS V DC Blocking Voltage 60 V R I Average Rectified Output Current at T = 90C (Note 2) 10 A O L I NonRepetitive Peak Forward Surge Current (Note 3) 280 A FSM C Typical Junction Capacitance, V = 4 V, 1 MHz 550 pF J R T Operating Junction Temperature Range 55 to +150 C J T Storage Temperature Range 55 to +150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. All test conducted at T = T = 25C unless otherwise noted. A J 2. Mounted on 30 mm x 30 mm FR4 PCB. 3. Pulse condition: 8.3 ms single halfsine wave. Test method is compliant with MIL standard (MILSTD750E). THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 4) A Minimum Land Maximum Land Symbol Characteristic Pattern Pattern Unit R JunctiontoAmbient Thermal Resistance 105 38 C/W JA JunctiontoLead Thermal Characteristics, 18 13 C/W JL Thermocouple Soldered to Anode JunctiontoLead Thermal Characteristics, 8 5 Thermocouple Soldered to Cathode 4. The thermal resistances (R & ) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 1 JA JL and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils. F S F F S S F F S S Figure 1. Minimum Land Pattern of 2 oz Copper Figure 2. Maximum Land Pattern of 2 oz Copper www.onsemi.com 2