HGTP7N60A4 ON Semiconductor

HGTP7N60A4 electronic component of ON Semiconductor
HGTP7N60A4 ON Semiconductor
HGTP7N60A4 IGBT Transistors
HGTP7N60A4  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of HGTP7N60A4 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. HGTP7N60A4 IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. HGTP7N60A4
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: TO-220 IGBTs ROHS
N-Channel Enhancement-Mode 600V Field-Stop Power MOSFET.
Datasheet: HGTP7N60A4 Datasheet (PDF)
Price (USD)
289: USD 1.5131 ea
Line Total: USD 437.29 
Availability : 0
  
QtyUnit Price
289$ 1.5131

Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.1577
10$ 1.8673
25$ 1.7615
100$ 1.3759
500$ 1.1567


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 400
Multiples : 400
QtyUnit Price
400$ 0.8286
800$ 0.7955
1600$ 0.7955
2000$ 0.7955
6000$ 0.7955


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 289
Multiples : 289
QtyUnit Price
289$ 1.5131


Availability 0
Ship by Tue. 19 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.5105
10$ 2.8532
30$ 2.3784
100$ 1.9841
500$ 1.9183
1000$ 1.8843


Availability 0
Ship by Tue. 12 Aug to Mon. 18 Aug
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 1.8866

   
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Dc Collector Current
Collector Emitter Saturation Voltage Vceon
Power Dissipation Pd
Collector Emitter Voltage Vbrceo
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Current Ic Continuous A Max
Current Temperature
Fall Time Tf
Full Power Rating Temperature
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Pin Format
Power Dissipation Max
Power Dissipation Ptot Max
Pulsed Current Icm
Rise Time
Termination Type
Transistor Polarity
Transistor Type
Voltage Vces
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We are delighted to provide the HGTP7N60A4 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HGTP7N60A4 and other electronic components in the IGBT Transistors category and beyond.

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The HGTP7N60A4 is a enhancement mode N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It has an outstanding switching performance, low gate charge and avalanche energy rating making it suitable for high frequency switching, primary side control in low power converters. It is available in a TO-220AB, through-hole package and has a gate-source voltage range of 25V to 500V, a drain current rating of 7A, a drain-source voltage rating of 500V, a continuous drain current of 14A and an operating temperature range of -55°C to 175°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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