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HUFA76429D3ST F085 Data Sheet September 2010 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging Features Ultra Low On-Resistance JEDEC TO-252AA - r = 0.023, V = 10V DS(ON) GS - r = 0.027, V = 5V DS(ON) GS DRAIN (FLANGE) Simulation Models - Temperature Compensated PSPICE and SABER Electriecal Models GATE - Spice and SABER Thermal Impedance Models SOURCE - www.fairchild.com Peak Current vs Pulse Width Curve UIS Rating Curve Switching Time vs R Curves Symbol GS Qualified to AEC Q101 D RoHS Compliant Ordering Information G PART NUMBER PACKAGE BRAND HUFA76429D3ST F085 TO-252AA 76429D S NOTE: When ordering, use the entire part number. Add the sufx T to obtain the variant in tape and reel, e.g., HUFA76429D3ST. o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specied C UNITS HUFA76429D3ST F085 Drain to Source Voltage (Note 1) . V 60 V DSS Drain to Gate Voltage (R = 20k) (Note 1) . V 60 V GS DGR Gate to Source Voltage . V 16 V GS Drain Current o Continuous (T = 25 C, V = 5V) I 20 A C GS D o Continuous (T = 25 C, V = 10V) (Figure 2) . I 20 A C GS D o Continuous (T = 100 C, V = 5V) . I 20 A C GS D o Continuous (T = 100 C, V = 4.5V) (Figure 2) . I 20 A C GS D Pulsed Drain Current I Figure 4 DM Pulsed Avalanche Rating UIS Figures 6, 17, 18 Power Dissipation P 110 W D o o Derate Above 25 C 0.74 W/ C o Operating and Storage Temperature . T , T -55 to 175 C J STG Maximum Temperature for Soldering o Leads at 0.063in (1.6mm) from Case for 10s .T 300 C L o Package Body for 10s, See Techbrief TB334 . T 260 C pkg NOTES: o o 1. T = 25 C to 150 C. J CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: