Product Information

HUF75652G3

HUF75652G3 electronic component of ON Semiconductor

Datasheet
Transistor: N-MOSFET; unipolar; 100V; 75A; 515W; TO247

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 13.4051 ea
Line Total: USD 13.41

78 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
78 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

HUF75652G3
ON Semiconductor

1 : USD 13.4051
10 : USD 11.0653
30 : USD 9.0522
100 : USD 8.3518

2182 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2
Multiples : 1

Stock Image

HUF75652G3
ON Semiconductor

2 : USD 10.8203

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Kind Of Package
LoadingGif

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HUF75652G3 is a N-channel MOSFET (metal oxide semiconductor field effect transistor) that is produced by ON Semiconductor. It has an RDS (on) of 0.38 ohms, a maximum drain-source voltage of 60V and a gate-source voltage of +/- 20V. It also features an integrated ESD protection diode, gate-source capacitance of 150pF, and an operating temperature range of -55C to 150C. HUF75652G3 is ideal for use in a range of applications, including automotive, power management and motor control.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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