STEALTH Rectifier 15 A, 600 V ISL9R1560G2-F085 Description The ISL9R1560G2F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth family exhibits low reverse recovery current (I ) RM(REC) www.onsemi.com and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode 2. ANODE in power supplies and other power switching applications. The low 1. CATHODE I and short ta phase reduce loss in switching transistors. The soft RRM recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. TO2472LD CASE 340CL Features High Speed Switching (t = 26 ns(Typ.) I = 15 A) rr F Low Forward Voltage (V = 2.2 V(Max) I = 15 A) F F Avalanche Energy Rated AECQ101 Qualified and PPAP Capable This Device is PbFree 1 2 2. Anode 1. Cathode Applications Automotive DC/DC Converter MARKING DIAGRAM Automotive On Board Charger Switching Power Supply Power Switching Circuits Y&Z&3&K R1560G2 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code R1560G2 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: March, 2020 Rev. 4 ISL9R1560G2F085/DISL9R1560G2F085 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V 600 V R Average Rectified Forward Current (T = 25C) I 15 A C F(AV) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 50 Hz) I 45 A FSM Avalanche Energy (1 A, 40 mH) E 20 mJ AVL Operating Junction and Storage Temperature T T 55 to C J, STG +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Tube Quantity ISL9R1560G2F085 R1560G2 TO2472LD 30 THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction to Case R 0.93 C/W JC Maximum Thermal Resistance, Junction to Ambient R 45 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Test Conditions Min Typ Max Unit Parameter Instantaneous Reverse Current I V = 600 V T = 25C 100 A R R C T = 175C 2 mA C Instantaneous Forward Voltage V I = 15 A T = 25C 1.8 2.2 V FM F C (Note 1) T = 175C 1.35 2 V C Reverse Recovery Time t I = 1 A, di/dt = 200 A/ s, T = 25C 20 30 ns rr F C (Note 2) V = 390 V CC I = 15 A, di/dt = 200 A/ s, T = 25C 26 40 ns F C V = 390 V CC T = 175C 114 ns C Reverse Recovery Time t I = 15 A, di/dt = 200 A/ s, T = 25C 15 ns a F C V = 390 V CC t 11 ns b Reverse Recovery Charge Q 40 nC rr Avalanche Energy E I = 1 A, L = 40 mH 20 mJ AVL AV Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 s, Duty Cycle = 2% 2. Guaranteed by design. www.onsemi.com 2