ISL9R1560PF2 15 A, 600 V, STEALTH Diode Description The ISL9R1560PF2 is a STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (I ) and RR exceptionally soft recovery under typical operating conditions. This www.onsemi.com device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I and RR short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Features TO220F Stealth Recovery, t = 29.4 ns ( I = 15 A) rr F 2 LEAD CASE 221AS Max. Forward Voltage, V = 2.2 V ( T = 25C) F C 600 V Reverse Voltage and High Reliability Avalanche Energy Rated MARKING DIAGRAM These Devices are PbFree and are RoHS Compliant Applications R1560 Hard Switched PFC Boost Diode PF2 UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit R1560PF2 = Specific Device Marking Repetitive Peak Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage V 600 V R Average Rectified Forward Current I 15 A F(AV) (T = 25C) C 1. Cathode 2. Anode Repetitive Peak Surge Current I 30 A FRM (20 kHz Square Wave) ORDERING INFORMATION Nonrepetitive Peak Surge Current I 200 A FSM See detailed ordering and shipping information on page 2 of (Halfwave 1 Phase 60 Hz) this data sheet. Power Dissipation P 37 W D Avalanche Energy (1 A, 40 mH) E 20 mJ AVL Operating and Storage Temperature T , T 55 to C J STG Range 175 Maximum Temperature for Soldering T 300 C L Leads at 0.063 in (1.6 mm) from Case for 10s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: December, 2017 Rev. 2 ISL9R1560PF2/DISL9R1560PF2 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Tape Width Quantity ISL9R1560PF2 R1560PF2 TO220F2L N/A 50 Units ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit OFF STATE CHARACTERISTICS I Instantaneous Reverse Current V = 600 V, T = 25C 100 A R R C V = 600 V, T = 125C 1.0 mA R C ON STATE CHARACTERISTICS V Instantaneous Forward Voltage I = 15 A, T = 25C 1.8 2.2 V F F C I = 15 A, T = 125C 1.65 2.0 V F C DYNAMIC CHARACTERISTICS C Junction Capacitance I = 0 A, V = 10 V 62 pF J F R SWITCHING CHARACTERISTICS t Reverse Recovery Time I = 1 A, dI /dt = 100 A/ s, 25 30 ns rr F F V = 30 V R I = 15 A, dI /dt = 100 A/ s, 35 40 ns F F V = 30 V R t Reverse Recovery Time I = 15 A, 29.4 ns rr F dI /dt = 200 A/ s, F I Maximum Reverse Recovery Current 3.5 A rr V = 390 V, T = 25C R C Q Reverse Recovered Charge 57 nC rr I = 15 A, t Reverse Recovery Time 90 ns rr F dI /dt = 200 A/ s, F S Softness Factor (t /t ) 2.0 b a V = 390 V, T = 125C R C I Maximum Reverse Recovery Current 5.0 A rr Q Reverse Recovered Charge 275 nC rr t Reverse Recovery Time I = 15 A, 52 ns rr F dI /dt = 800 A/ s, F S Softness Factor (t /t ) 1.36 b a V = 390 V, T = 125C R C I Maximum Reverse Recovery Current 13.5 A rr Q Reverse Recovered Charge 390 nC rr dI /dt Maximum di/dt during t 800 A/ s M b THERMAL CHARACTERISTICS R Thermal Resistance Junction to Case 4.1 C/W JC R Thermal Resistance Junction to Ambient TO247 70 C/W JA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2