ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT General Description Applications Automotive Ignition Coil Driver Circuits The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next Coil-On Plug Applications generation IGBTs that offer outstanding SCIS capability in the D- Pak (TO-263) and TO-220 plastic package. These devices are Features intended for use in automotive ignition circuits, specifically as coil 2 drivers. Internal diodes provide voltage clamping without the need Industry Standard D -Pak package o for external components. SCIS Energy = 500mJ at T = 25 C J Logic Level Gate Drive EcoSPARK devices can be custom made to specific clamp voltages. Contact your nearest ON Semiconductor sales Qualified to AEC Q101 office for more information. RoHS Compliant Formerly Developmental Type 49443 Package Symbol COLLECTOR JEDEC TO-263AB JEDEC TO-220AB JEDEC TO-262AA D- Pak E C E G C G R 1 GATE G R 2 E EMITTER COLLECTOR COLLECTOR (FLANGE) (FLANGE) Device Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage (I = 1 mA) 390 V CER C BV Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA) 24 V ECS C E At Starting T = 25C, I = 38.5A, L = 670 Hy 500 mJ SCIS25 J SCIS E At Starting T = 150C, I = 30A, L = 670 Hy 300 mJ SCIS150 J SCIS I Collector Current Continuous, At T = 25C, See Fig 9 46 A C25 C I Collector Current Continuous, At T = 110C, See Fig 9 31 A C110 C V Gate to Emitter Voltage Continuous 10 V GEM P Power Dissipation Total T = 25C 250 W D C Power Dissipation Derating T > 25C 1.67 W/C C T Operating Junction Temperature Range -40 to 175 C J T Storage Junction Temperature Range -40 to 175 C STG T Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 C L T Max Lead Temp for Soldering (Package Body for 10s) 260 C pkg ESD Electrostatic Discharge Voltage at 100pF, 1500 4kV 2009 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 3 ISL9V5036S3S/D