J110_D26Z ON Semiconductor

J110_D26Z electronic component of ON Semiconductor Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of J110_D26Z JFET across the USA, India, Europe, Australia, and various other global locations. J110_D26Z JFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

Part No. J110_D26Z
Manufacturer: ON Semiconductor
Category: JFET
Description: J110_D26Z
N-Channel MOSFET transistor, logic-level gate drive, RDS(on) < 2Ohm.
Datasheet:
Price (USD)
2000: USD 0.1132 ea
Line Total: USD 226.4 
Availability : 0
  
QtyUnit Price
2000$ 0.1132
4000$ 0.1108
6000$ 0.1096

Availability 0
Ship by Mon. 06 Oct to Fri. 10 Oct
MOQ : 2000
Multiples : 1
QtyUnit Price
2000$ 0.1132
4000$ 0.1108
6000$ 0.1096

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the J110_D26Z from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the J110_D26Z and other electronic components in the JFET category and beyond.

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The J110_D26Z is a N-Channel JFET transistor manufactured by ON Semiconductor. It is designed for low noise and low current switching applications. The maximum continuous drain current is 200 mA, while the drain-source voltage is -30 V. It has a breakdown voltage of -45 V, a gate-source voltage of -6 V to 0 V, and a drain-gate capacitance of 3.6 pF. The package type is TO-92-3. This transistor is ideal for applications requiring reduced power dissipation and extended longevity.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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