J211 / MMBFJ211 N-Channel RF Amplifier
J211 / MMBFJ211
N-Channel RF Amplifier
Description
This device is designed for HF/VHF mixer/amplifier
and applications where process 50 is not adequate.
Sufficient gain and low-noise for sensitive receivers.
Sourced from process 90.
G
TO-92
S
1. Drain
Note: Source & Drain
SOT-23
2. Source
D
are interchangeable
1 1
3. Gate
2
3 2
3
Straight Lead Bent Lead
Bulk Packing Tape & Reel
Ammo Packing
Figure 1. J211 Device Package Figure 2. MMBFJ211 Device Package
Ordering Information
Part Number Top Mark Package Packing Method
J211-D74Z J211 TO-92 3L Ammo
MMBFJ211 62W SOT-23 3L Tape and Reel
1997 Semiconductor Components Industries, LLC. Publication Order Number:
J211-D74Z/D
September-2017, Rev. 2J211 / MMBFJ211 N-Channel RF Amplifier
(1), (2)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
V Drain-Gate Voltage 25 V
DG
V Gate-Source Voltage -25 V
GS
I Forward Gate Current 10 mA
GF
T , T Operating and Storage Junction Temperature Range -55 to 150 C
J STG
Notes:
1. These ratings are based on a maximum junction temperature of 150C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty-cycle operations.
Thermal Characteristics
Values are at T = 25C unless otherwise noted.
A
Max.
Symbol Parameter Unit
(3) (3)
J211 MMBFJ211
Total Device Dissipation 350 225 mW
P
D
Derate Above 25C 2.8 1.8 mW/C
R Thermal Resistance, Junction-to-Case 125 C/W
JC
R Thermal Resistance, Junction-to-Ambient 357 556 C/W
JA
Note:
2
.
3. Device mounted on FR-4 PCB 36mm 18mm 1.5mm; mounting pad for the collector lead minimum 6cm
Electrical Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V Gate-Source Breakdown Voltage I = 1.0 A, V = 0 -25 V
(BR)GSS G DS
I Gate Reverse Current V = 15 V, V = 0 -100 pA
GSS GS DS
V (off) Gate-Source Cut-Off Voltage V = 15 V, I = 1.0 nA -2.5 -4.5 V
GS DS D
On Characteristics
(4)
I Zero-Gate Voltage Drain Current V = 15 V, V = 0 7.0 20 mA
DSS DS GS
Small Signal Characteristics
Common Source Forward V = 15 V, V = 0,
DS GS
g 7000 12000 mhos
fs
Transconductance f = 1.0 kHz
Common Source Output V = 15 V, V = 0,
DS GS
g 200 mhos
oss
Conductance f = 1.0 kHz
Note:
4. Pulse test: pulse width 300 s
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2