JAN2N2905A ON Semiconductor

JAN2N2905A electronic component of ON Semiconductor
JAN2N2905A ON Semiconductor
JAN2N2905A Bipolar Transistors - BJT
JAN2N2905A  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of JAN2N2905A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JAN2N2905A Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. JAN2N2905A
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT JAN2N2905A
Datasheet: JAN2N2905A Datasheet (PDF)
Price (USD)
1: USD 15.0231 ea
Line Total: USD 15.02 
Availability : 0
  
QtyUnit Price
1$ 15.0231
5$ 13.4405
10$ 12.8561
25$ 12.43
50$ 12.0161

Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 15.0231
5$ 13.4405
10$ 12.8561
25$ 12.43
50$ 12.0161

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the JAN2N2905A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JAN2N2905A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N2904(A) and 2N2905(A) Qualified Levels: PNP SWITCHING SILICON JAN, JANTX, JANTXV Available on TRANSISTOR and JANS commercial versions Qualified per MIL-PRF-19500/290 DESCRIPTION This family of 2N2904 and 2N2905A switching transistors are military qualified up to the JANS level for high-reliability applications. These devices are also available in a TO-5 package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website 2N2904(A) and 2N2905(A) MECHANICAL and PACKAGING CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). Can be RoHS compliant with pure matte-tin (commercial grade only). MARKING: Part number, date code, manufacturers ID. POLARITY: PNP (see package outline). WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N2904 A (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant JANS = JANS Level Blank = Commercial Electrical Parameter Modifier JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Common-base open-circuit output capacitance. C obo I Collector cutoff current, base open. CEO I Collector cutoff current, circuit between base and emitter. CEX I Emitter cutoff current, collector open. EBO h Common-emitter static forward current transfer ratio. FE V Collector-emitter voltage, base open. CEO V Collector-emitter voltage, emitter open. CBO V Emitter-base voltage, collector open. EBO T4-LDS-0186, Rev. 2 (121219) 2012 Microsemi Corporation Page 2 of 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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