Product Information

LB1668M-TLM-E

LB1668M-TLM-E electronic component of ON Semiconductor

Datasheet
Motor/Motion/Ignition Controllers & Drivers 2PH DRV SENSOR NA ; TWO PHASE DRIVER WITH HALL SENSOR METHOD (NO SPEED CONTROL)

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1000

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LB1668M-TLM-E
ON Semiconductor

1000 : USD 0.4852
10000 : USD 0.4654
100000 : USD 0.4561
N/A

Obsolete
0 - WHS 2


Multiples : 0

Stock Image

LB1668M-TLM-E
ON Semiconductor

N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

LB1668M-TLM-E
ON Semiconductor

1 : USD 3.0292
10 : USD 1.1435
25 : USD 1.046
100 : USD 0.8741
250 : USD 0.8171
500 : USD 0.7343
1000 : USD 0.6069
2000 : USD 0.5862
N/A

Obsolete
     
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RoHS - XON
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LB1668M 2phase Unipolar Brushless Motor Driver Monolithic Digital IC Overview www.onsemi.com The LB1668M is 2-phase unipolar drive brushless motor driver that features a wide usable voltage range and a minimal number of required external components. It also supports the formation of motor lock protection and automatic recovery circuits. Features Output protection Zener Diodes with Variable Breakdown Voltages When the Z1 and Z2 Pins are Open: V = 57 V OLM MFP14S When the Z1 and Z2 Pins are Shorted: V = 32 V OLM CASE 751CB An External Zener Diode can be Connected between Z1 and V CC Can Support Both 12 V and 24 V Power Supplies by Changing an MARKING DIAGRAM External Resistor Hall Elements can be Connected Directly 1.5 A Output Current Output Transistors Built in XXXXXXXXXX YMDDD Built-in Rotation Detection Function that Outputs Low when Driven and High when Stopped Motor Lock Protection and Automatic Recovery Functions Built in Thermal Shutdown Function XXXXX = Specific Device Code Y = Year M = Month DDD = Additional Traceability Data PIN ASSIGNMENT 1 14 V IN IN RD IN+ C Z2 Z1 NC OUT1 OUT2 NC NC GND NC 7 8 (Top View) ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: March, 2018 Rev. 1 LB1668M/DLB1668M SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS (T = 25C) A Symbol Parameter Conditions Ratings Unit I max Maximum Input Current t 20 ms 200 mA CC V Output Supply Voltage Internal V OUT I Output Current 1.5 A OUT I /I RD/FG Flow-in Current 10 mA RD FG V /V RD/FG Supply Voltage 30 V RD FG P max Allowable Power Dissipation With specified board (Note 1) 0.8 W d T Operating Temperature 30 to +80 C opr T Storage Temperature 55 to +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1Specified board: 20 mm 15 mm 1.5 mm, glass epoxy. ALLOWABLE OPERATING RANGES (T = 25C) A Symbol Parameter Conditions Ratings Unit I Input Current Range 6.0 to 50 mA CC V Common-mode Input Voltage Range 0 to V 1.5 V ICM IN Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. ELECTRICAL CHARACTERISTICS (T = 25C, I = 10 mA) A CC Symbol Parameter Conditions Min Typ Max Unit V 1 Output Limit Voltage Z1, Z2 open 54 57 60 V OLM V 2 Z1, Z2 short 31 33 35 V OLM Output Saturation Voltage V (sat)1 I = 0.5 A 0.95 1.2 V O O V (sat)2 I = 1.0 A 1.15 1.5 V O O V (sat)3 I = 1.5 A 1.4 2.0 V O O V V Input Voltage I = 7.0 mA 6.4 6.7 7.0 V IN IN CC V Amp Input Offset Voltage 7.0 0 +7.0 mV OFF I Amp Input Bias Current 250 nA BA V (sat) RD Output Saturation Voltage I = 5 mA 0.1 0.3 V RD RD I 1 C Flow-out Current 2.1 3.0 3.9 A C I 2 C Discharge Current 0.31 0.44 0.59 A C V 1 Comparator Input Threshold Voltage 0.77 0.8 V 0.83 V TH IN V 2 0.42 0.45 V 0.48 V TH IN TSD Thermal Shutdown Current Operating Design target value (Note 2) 180 C Temperature TSD Thermal Shutdown Circuit Hysteresis Design target value (Note 2) 40 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Design target value and si not measured. www.onsemi.com 2

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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