Product Information

LE25S40AMCTWG

LE25S40AMCTWG electronic component of ON Semiconductor

Datasheet
Flash Serial-SPI 1.8V 4M-bit 512K x 8 T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 0.4605 ea
Line Total: USD 921

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2000
Multiples : 2000

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LE25S40AMCTWG
ON Semiconductor

2000 : USD 0.4605
32000 : USD 0.4333
64000 : USD 0.4333
96000 : USD 0.4333

     
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RoHS - XON
Icon ROHS
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Series
Memory Size
Maximum Clock Frequency
Interface Type
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Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
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Memory Type
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Ordering number : ENA2278A LE25S40AMC CMOS LSI LE25S40AMC Specifications Absolute Maximum Ratings Parameter Symbol Conditions Ratings unit Maximum supply voltage With respect to V 0.5 to +2.4 V SS DC voltage (all pins) With respect to V 0.5 to V +0.5 V SS DD Storage temperature Tstg 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Operating Conditions Parameter Symbol Conditions Ratings unit Operating supply voltage 1.65 to 1.95 V Operating ambient temperature 40 to +90 C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Allowable DC Operating Conditions Ratings Parameter Symbol Conditions unit min typ max SCK = 0.1V /0.9V , 30MHz 6mA DD DD Single HOLD = WP = 0.9V , DD 40MHz 8mA Read mode operating current I CCR SO = open Dual 40MHz 10 mA Write mode operating current I t = t = t = typ., t = max CCW SSE SE CHE PP 15mA (erase+page program) CS HOLD WP CMOS standby current I = V , = = V , SB DD DD 50 A SI = V /V , SO = open SS DD Power-down standby current I CS = V , HOLD = WP = V , DSB DD DD 10 A SI = V /V , SO = open SS DD Input leakage current I 2 A LI Output leakage current I 2 A LO Input low voltage V 0.3 0.3V V IL DD Input high voltage V 0.7V V +0.3 V IH DD DD Output low voltage V I = 100A, V = V min 0.2 OL OL DD DD V I = 1.6mA, V = V min 0.4 OL DD DD Output high voltage V I = 100A, V = V min V 0.2 V OH OH DD DD CC Data hold, Rewriting frequency Parameter Conditions min max unit Program/Erase 100,000 times/ Rewriting frequency Sector Status resister write 1,000 Data hold 20 year Pin Capacitance at Ta = 25C, f = 1MHz Ratings Parameter Symbol Conditions unit max Output pin capacitance C V = 0V 12 pF SO SO Input pin capacitance C V = 0V 6 pF IN IN Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for some of the sampled devices. No.A2278-2/23

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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