LV5636VH-MPB-H ON Semiconductor

Ordering number : ENA1979 LV5636VH Bi-CMOS Integrated Circuit DC/DC converter LV5636VH Recommended Operating Conditions at Ta = 25C Parameter Symbol Conditions Ratings Unit V supply voltage V 8 to 23 V CC CC LDOIN input voltage V 8 to 28 V LDOIN SW voltage V -0.3 to 28 V SW EN voltage V 0 to 23 V EN Electrical Characteristics at Ta = 25C, V = 12V, V =V =2V CC EN CTL Ratings Parameter Symbol Conditions Unit min typ max ALL Supply current I Switching is turned off 2.1 4.0 mA CC I EN=0V, LDOIN=0V 10A OFF Reference voltage VREF 1.26 V LDO output voltage LDOOUT1 CTL=High (-2%) 15.9 (2%) V LDOOUT2 CTL=Low (-2%) 11.7 (2%) V DCDC output voltage DCDCOUT1 CTL=High (-2%) 16.5 (2%) V DCDCOUT2 CTL=Low (-2%) 12.3 (2%) V Enable voltage V 2.0 V EN Disable voltage V 0.4V DIS EN input current I V=2.0V 10A EN EN PGOOD threshold V Power-good output is good when LDO is 85 % PG 85% or higher of the setting value. PGOOD sink current I Where power-good output is no good and 1.0 mA PG V =0.5V. PGOOD PGOOD leak current I LK Where power-good output is good and 10 A PG V =2V PGOOD PGDLY source current I 3.84 4.8 5.76 A PGDLY PGDLY threshold V 1.26 V PGDLY CTL high voltage VH 15V output setting 2.0 V CTL CTL low voltage VL 11V output setting 0.4 V CTL CTL input current I V=2V 20A CTL CTL UVLO on voltage V 7.0 V UVLO Thermal shutdown temperature TTSD *2 155 C TSD hysteresis THYS *2 30 C DC/DC boost converter FB output voltage Low FB low IN=2.0V, I =-20A (sink) 0.2 V FB FB output voltage High HB high IN=2.0V, I =20A (source) 1.8 V FB Soft-start time TSS 2.6 ms Oscillator frequency f 1 MHz OSC Max ON duty D max 85 % SW ON resistance R 0.7 ON SW peak current I 1.8 A PK SCP timer t 1.6 ms SCP LDO Maximum output current IO max 450 620 800 mA Line regulation R 16.5V LDOIN 21.5V 20 mV LN Load regulation R 10mA I 300mA 50 mV LD O Dropout voltage V I=400mA 0.35 0.5V DROP O Short current I LDOOUT=GND 100 mA SHORT *2: Design guarantee value. No.A1979-2/8