MAC4DCNT4G ON Semiconductor

MAC4DCNT4G electronic component of ON Semiconductor
MAC4DCNT4G ON Semiconductor
MAC4DCNT4G Triacs
MAC4DCNT4G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MAC4DCNT4G Triacs across the USA, India, Europe, Australia, and various other global locations. MAC4DCNT4G Triacs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

Part No. MAC4DCNT4G
Manufacturer: ON Semiconductor
Category: Triacs
Description: ON Semiconductor Triacs THY 4A 800V TRIAC
Datasheet: MAC4DCNT4G Datasheet (PDF)
Price (USD)
1: USD 3.7875 ea
Line Total: USD 3.79 
Availability : 2521
  
Ship by Wed. 12 Nov to Fri. 14 Nov
QtyUnit Price
1$ 3.7875
10$ 1.1208
2500$ 1.0219

Availability 2521
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.7875
10$ 1.1208
2500$ 1.0219


Availability 605
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 217
Multiples : 1
QtyUnit Price
217$ 1.2025
217$ 1.1993
218$ 1.196
250$ 1.1928
500$ 1.1439

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Package Case
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

MAC4DCNT4G Alternative Parts

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Triacs THY 4A 800V TRIAC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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We are delighted to provide the MAC4DCNT4G from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MAC4DCNT4G and other electronic components in the Triacs category and beyond.

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Thyristors Surface Mount 600V - 800V > MAC4DCM, MAC4DCN Pb MAC4DCM, MAC4DCN Description The MAC4DCM and MAC4DCN are designed for high volume, low cost, industrial and consumer applications such as motor control process control temperature, light and speed control. Features Small Size Surface Mount Epoxy Meets UL 94 V0 DPAK Package 0.125 in Passivated Die for ESD Ratings: Human Reliability and Uniformity Body Model, 3B > 8000V Blocking Voltage to 800 V Machine Model, C > 400V OnState Current Rating Lead-free Packages are of 4.0 A RMS at 108C Available High Immunity to dv/dt 500 V/s at 125C High Immunity to di/dt 6.0 A/ms at 125C Pin Out Functional Diagram 4 G,3 4 A,2 K,1 2 1 3 1 2 3 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.09/01/20Thyristors Surface Mount 600V - 800V > MAC4DCM, MAC4DCN Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) MAC4DCM V , 600 DRM V (Gate Open, Sine Wave 50 to 60 Hz, T = -40 to 125C) MAC4DCN V 800 J RRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 108C) I 4.0 A C T (RMS) Peak Non-Repetitive Surge Current I 40 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 125C) C 2 Circuit Fusing Consideration (t = 8.3 msec) I t 6.6 Asec Peak Gate Current (Pulse Width 20 sec, T = 108C) I 4.0 A C GM Peak Gate Power (Pulse Width 10 sec, T = 108C) P 2.0 W C GM Average Gate Power (t = 8.3 msec, T = 108C) P 1.0 W C G(AV) Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 3.5 JC Thermal Resistance, JunctiontoAmbient R 88 C/W JA (Note 2) JunctiontoAmbient R 80 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8 from case for 10 seconds. Electrical Characteristics - OFF (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit - - 0.005 Peak Repetitive Blocking Current T = 25C I , J DRM mA (V = V = V Gate Open) T = 110C I - - 2.0 D DRM RRM J RRM Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak OnState Voltage (Note 4) (I = 6.0 A) V 1.3 1.6 V TM TM MT2(+), G(+) 8.0 12 35 Gate Trigger Current (Continuous dc) MT2(+), G() I 8.0 18 35 mA GT (V = 12 V, R = 100 ) D L MT2(), G() 8.0 22 35 Holding Current I 6.0 22 35 mA H (V = 12 V, Gate Open, Initiating Current = 200 mA) D MT2(+), G(+) 30 60 Latching Current MT2(+), G() I 50 80 mA L (V = 12 V, I = 35 mA) D G MT2(), G() 20 60 MT2(+), G(+) 0.5 0.8 1.3 Gate Trigger Voltage (Continuous dc) MT2(+), G() V 0.5 0.8 1.3 V GT (V = 12 V, R = 100 ) D L MT2(), G() 0.5 0.8 1.3 MT2(+), G(+) 0.2 0.4 Gate NonTrigger Voltage (T = 125C) MT2(+), G() V 0.2 0.4 V J GD (V = 12 V, R = 100 ) D L MT2(), G() 0.2 0.4 4. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: BA.09/01/20

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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