MBD110DWT1G, MBD330DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of MBD110DWT1G, MBD330DWT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 A) MBD110DWT1G 7.0 10 R MBD330DWT1G 30 Diode Capacitance C pF D (V = 0, f = 1.0 MHz, Note 1) MBD110DWT1G 0.88 1.0 R Total Capacitance C pF T (V = 15 Volts, f = 1.0 MHz) MBD330DWT1G 0.9 1.5 R Reverse Leakage I R (V = 3.0 V) MBD110DWT1G 0.02 0.25 A R (V = 25 V) MBD330DWT1G 13 200 nA R Noise Figure NF dB (f = 1.0 GHz, Note 2) MBD110DWT1G 6.0 Forward Voltage V V F (I = 10 mA) MBD110DWT1G 0.5 0.6 F (I = 1.0 mA) MBD330DWT1G 0.38 0.45 F (I = 10 mA) 0.52 0.6 F ORDERING INFORMATION Device Marking Package Shipping MBD110DWT1G M4 SC 88 / SOT363 3000 Units / Tape & Reel (Pb Free) MBD330DWT1G T4 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.