MBR1100 Axial Lead Rectifier These rectifiers employ the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in lowvoltage, www.onsemi.com highfrequency inverters, free wheeling diodes, and polarity protection diodes. SCHOTTKY Features BARRIER RECTIFIER Low Reverse Current Low Stored Charge, Majority Carrier Conduction 1.0 AMPERE, 100 VOLTS Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction GuardRing for Stress Protection Low Forward Voltage 175C Operating Junction Temperature High Surge Capacity These Devices are PbFree and are RoHS Compliant DO41 Mechanical Characteristics: AXIAL LEAD Case: Epoxy, Molded CASE 59 STYLE 1 Weight: 0.4 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable MARKING DIAGRAM Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Polarity: Cathode Indicated by Polarity Band A MBR1100 MAXIMUM RATINGS YYWW Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM A = Assembly Location Working Peak Reverse Voltage V RWM DC Blocking Voltage V Y = Year R WW = Work Week Average Rectified Forward Current I 1.0 A O = PbFree Package (V 0.2 V (dc), R = 50C/W, R(equiv) R JA (Note: Microdot may be in either location) P.C. Board Mounting, see Note 3 , T = 120C) A Peak Repetitive Forward Current I 2.0 A FRM (V 0.2 V (dc), R = 50C/W, R(equiv) R JA ORDERING INFORMATION P.C. Board Mounting, see Note 3 , T = 110C) A NonRepetitive Peak Surge Current I 50 A Device Package Shipping FSM (Surge Applied at Rated Load Conditions MBR1100G Axial Lead 1000 Units/Bag Halfwave, Single Phase, 60 Hz) (PbFree) Operating and Storage Junction Temperature T , T 65 to C J stg Range (Note 1) +175 MBR1100RLG Axial Lead 5000/Tape & Reel (PbFree) Voltage Rate of Change (Rated V ) dv/dt 10 V/ns R For information on tape and reel specifications, Stresses exceeding those listed in the Maximum Ratings table may damage the including part orientation and tape sizes, please device. If any of these limits are exceeded, device functionality should not be refer to our Tape and Reel Packaging Specification assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: February, 2016 Rev. 7 MBR1100/DMBR1100 THERMAL CHARACTERISTICS (See Note 4) Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R See Note 3 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) L Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 2) V V F (i = 1 A, T = 25C) 0.79 F L (i = 1 A, T = 100C) 0.69 F L Maximum Instantaneous Reverse Current Rated dc Voltage (Note 2) i mA R (T = 25C) 0.5 L (T = 100C) 5.0 L 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 20 1 K 400 10 T = 150C 200 T = 150C J J 5.0 100 100C 125C 40 2.0 20 25C 10 100C 1.0 4.0 0.5 2.0 1.0 0.2 0.4 0.2 0.1 0.1 0.05 0.04 0.02 0.02 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 10 20 30 40 50 60 70 80 90 100 v , INSTANTANEOUS VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if V is sufficiently below rated V . R R 4.0 4.0 3.0 3.0 SQUARE WAVE dc dc 2.0 2.0 SQUARE WAVE 1.0 1.0 0 0 0 20 40 60 80 100 120 140 160 180 200 0 1.0 2.0 3.0 4.0 5.0 T , AMBIENT TEMPERATURE (C) I , AVERAGE FORWARD CURRENT (AMPS) A F(AV) Figure 3. Current Derating Figure 4. Power Dissipation (Mounting Method 3 per Note 3) www.onsemi.com 2 I , AVERAGE FORWARD CURRENT (AMPS) i , INSTANTANEOUS FORWARD CURRENT (AMPS) F(AV) F I , REVERSE CURRENT ( A) R P , AVERAGE POWER DISSIPATION (WATTS) F(AV)