Product Information

MBR120VLSFT1G

MBR120VLSFT1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Schottky Diodes & Rectifiers 1A 20V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1123 ea
Line Total: USD 336.9

52380 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
232800 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

MBR120VLSFT1G
ON Semiconductor

3000 : USD 0.1182
6000 : USD 0.1171
9000 : USD 0.1155
24000 : USD 0.1121
30000 : USD 0.1098

52380 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

MBR120VLSFT1G
ON Semiconductor

3000 : USD 0.1123
6000 : USD 0.1113
9000 : USD 0.1104
24000 : USD 0.1082

6805 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 65
Multiples : 1

Stock Image

MBR120VLSFT1G
ON Semiconductor

65 : USD 0.2218
100 : USD 0.1644
250 : USD 0.1496
500 : USD 0.1348
1000 : USD 0.1321

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
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MBR120VLSF, NRVB120VLSF Schottky Power Rectifier, Surface Mount 1.0 A, 20 V, SOD-123 Package MBR120VLSF, NRVB120VLSF MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 20 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 1.0 A F(AV) (Rated V ) T = 119C R L NonRepetitive Peak Surge Current I 45 A FSM (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +125 C stg Operating Junction Temperature T 65 to +125 C J Voltage Rate of Change (Rated V ) dv/dt 1000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoLead (Note 1) R 26 C/W tjl Thermal Resistance JunctiontoLead (Note 2) R 21 tjl Thermal Resistance JunctiontoAmbient (Note 1) R 325 tja Thermal Resistance JunctiontoAmbient (Note 2) R 82 tja 1. Mounted with minimum recommended pad size, PC Board FR4. 2 2. Mounted with 1 in. copper pad (Cu area 700 mm ). ELECTRICAL CHARACTERISTICS Characteristic Symbol T = 25 C T = 85 C Unit J J Maximum Instantaneous Forward Voltage (Note 3) V V F (I = 0.1 A) 0.275 0.205 F (I = 0.5 A) 0.315 0.270 F (I = 1.0 A) 0.340 0.300 F Maximum Instantaneous Reverse Current (Note 3) I mA R (Rated DC Voltage) 0.60 15 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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