MBR16100CTG ON Semiconductor

MBR16100CTG Switch-mode Power Rectifier Features and Benefits Low Forward Voltage www.onsemi.com Low Power Loss/High Efficiency High Surge Capacity SCHOTTKY BARRIER 175C Operating Junction Temperature RECTIFIER Low Stored Charge Majority Carrier Conduction 16 A Total (8.0 A Per Diode Leg) 16 AMPERES, 100 VOLTS This Device is PbFree and is RoHS Compliant* Applications 1 Power Supply Output Rectification 2, 4 3 Power Management Instrumentation MARKING Mechanical Characteristics DIAGRAM Case: Epoxy, Molded 4 Epoxy Meets UL 94 V0 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal TO220 AYWW Leads are Readily Solderable CASE 221A B16100G STYLE 6 Lead Temperature for Soldering Purposes: AKA 260C Max. for 10 Seconds 1 ESD Rating: Human Body Model = 3B 2 3 Machine Model = C A = Assembly Location Y = Year WW = Work Week B16100 = Device Code G = PbFree Package AKA = Diode Polarity ORDERING INFORMATION Device Package Shipping MBR16100CTG TO220 50 Units/Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 6 MBR16100CT/DMBR16100CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (T = 166C) Per Diode 8.0 C Per Device 16 Peak Repetitive Forward Current I 16 A FRM (Square Wave, 20 kHz) T = 165C C Non-repetitive Peak Surge Current I 150 A FSM (Surge applied at rated load conditions half-wave, single phase, 60 Hz) I 0.5 A Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) RRM Operating Junction Temperature (Note 1) T 65 to +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, JunctiontoCase (Min. Pad) R 2.0 C/W JC JunctiontoAmbient (Min. Pad) R 60 JA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Min Typical Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 8.0 A, T = 125C) 0.56 0.60 F J (i = 8.0 A, T = 25C) 0.68 0.74 F J (i = 16 A, T = 125C) 0.67 0.69 F J (i = 16 A, T = 25C) 0.79 0.84 F J Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, T = 125C) 0.95 5.0 J (Rated dc Voltage, T = 25C) 0.0013 0.1 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. www.onsemi.com 2