MBR30H100CTG,
MBRF30H100CTG
Switchmode
Power Rectifier
100 V, 30 A
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Features and Benefits
SCHOTTKY BARRIER
Low Forward Voltage: 0.67 V @ 125C
Low Power Loss/High Efficiency RECTIFIER
High Surge Capacity
30 AMPERES
175C Operating Junction Temperature
100 VOLTS
30 A Total (15 A Per Diode Leg)
1
These are PbFree Devices
2, 4
Applications
3
Power Supply Output Rectification
Power Management MARKING
DIAGRAMS
Instrumentation
4
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V0 @ 0.125 in
TO220
Weight: 1.9 Grams (Approximately) CASE 221A AYWW
STYLE 6 B30H100G
Finish: All External Surfaces Corrosion Resistant and Terminal
AKA
Leads are Readily Solderable
1
Lead Temperature for Soldering Purposes:
2
3
260C Max. for 10 Seconds
ESD Rating: Human Body Model = 3B
Machine Model = C
TO220 FULLPAK AYWW
CASE 221AH B30H100G
AKA
1
2
3
A = Assembly Location
Y = Year
WW = Work Week
B30H100 = Device Code
G = PbFree Package
AKA = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2016
1 Publication Order Number:
July, 2016 Rev. 6 MBR30H100CT/DMBR30H100CTG, MBRF30H100CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage V 100 V
RRM
Working Peak Reverse Voltage V
RWM
DC Blocking Voltage V
R
Average Rectified Forward Current I A
F(AV)
(T = 156C) Per Diode 15
C
Per Device 30
Peak Repetitive Forward Current I 30 A
FM
(Square Wave, 20 kHz, T = 151C)
C
Nonrepetitive Peak Surge Current I 250 A
FSM
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature (Note 1) T +175 C
J
Storage Temperature T 65 to +175 C
stg
Voltage Rate of Change (Rated V ) dv/dt 10,000 V/s
R
Controlled Avalanche Energy (see test conditions in Figures 13 and 14) W 200 mJ
AVAL
ESD Ratings: Machine Model = C > 400 V
Human Body Model = 3B > 8000
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP /dT < 1/R .
D J JA
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance C/W
(MBR30H100CTG) Junction-to-Case R 2.0
JC
Junction-to-Ambient R 60
JA
(MBRF30H100CTG) Junction-to-Case 4.2
R
JC
Junction-to-Ambient 75
R
JA
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic Symbol Min Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 2) v V
F
(i = 15 A, T = 25C) 0.76 0.80
F J
(i = 15 A, T = 125C) 0.64 0.67
F J
(i = 30 A, T = 25C) 0.88 0.93
F J
(i = 30 A, T = 125C) 0.76 0.80
F J
Maximum Instantaneous Reverse Current (Note 2) i mA
R
(Rated DC Voltage, T = 125C) 1.1 6.0
J
(Rated DC Voltage, T = 25C) 0.0008 0.0045
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Order Number Package Type Shipping
MBR30H100CTG TO220 50 Units / Rail
(PbFree)
MBRF30H100CTG TO220FP 50 Units / Rail
(PbFree)
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2