MBRF30H150CTG, MBR30H150CTG Switch-mode Power Rectifier 150 V, 30 A www.onsemi.com Features and Benefits SCHOTTKY BARRIER Low Forward Voltage Low Power Loss/High Efficiency RECTIFIER High Surge Capability 30 AMPERES, 150 VOLTS 30 A Total (15 A Per Diode Leg) GuardRing for Stress Protection 1 2, 4 These Devices are PbFree and are RoHS Compliant 3 Applications Power Supply Output Rectification MARKING DIAGRAMS Power Management Instrumentation Mechanical Characteristics: Case: Epoxy, Molded AYWW Epoxy Meets UL 94 V0 0.125 in B30H150G TO220 FULLPAK Weight (Approximately): 1.9 Grams (TO220 & TO220FP) AKA CASE 221AH Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 1 2 Lead Temperature for Soldering Purposes: 3 260C Max. for 10 Seconds 4 TO220 AYWW CASE 221A B30H150G STYLE 6 AKA 1 2 3 A = Assembly Location Y = Year WW = Work Week B30H150 = Device Code G = PbFree Device AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 3 MBRF30H150CT/DMBRF30H150CTG, MBR30H150CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 150 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (Per Leg) I 15 A F(AV) (Rated V ) T = 124C (Per Device) 30 R C Nonrepetitive Peak Surge Current I 200 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) T 20 to +150 C J Storage Temperature T 65 to +150 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R ESD Ratings: Machine Model = C > 400 V Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance C/W (MBR30H150CTG) JunctiontoCase R 2.0 JC JunctiontoAmbient R 45 JA (MBRF30H150CTG) JunctiontoCase R 2.5 JC ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 5 A, T = 25C) 0.69 0.75 F C (I = 5 A, T = 125C) 0.55 0.60 F C (I = 15 A, T = 25C) 0.98 1.11 F C (I = 15 A, T = 125C) 0.68 0.73 F C Maximum Instantaneous Reverse Current (Note 2) i R (Rated DC Voltage, T = 25C) 60 A C (Rated DC Voltage, T = 125C) 50 mA C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. DEVICE ORDERING INFORMATION Device Order Number Package Type Shipping MBRF30H150CTG TO220FP 50 Units / Rail (PbFree) MBR30H150CTG TO220 50 Units / Rail (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. www.onsemi.com 2