Product Information

MBR4045PTG

MBR4045PTG electronic component of ON Semiconductor

Datasheet
Diode Schottky 45V 40A 3-Pin(3+Tab) SOT-93 Rail

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

13: USD 4.5441 ea
Line Total: USD 59.07

0 - Global Stock
MOQ: 13  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 13
Multiples : 1

Stock Image

MBR4045PTG
ON Semiconductor

13 : USD 4.5441
25 : USD 4.1432
50 : USD 4.0095

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
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MBR4045PT SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage MBR4045PT MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage V 45 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 125C) Per Diode 20 R C Per Device 40 Peak Repetitive Forward Current, I 40 A FRM (Rated V , Square Wave, 20 kHz R T = 90C) Per Diode C NonRepetitive Peak Surge Current I 400 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Current, I 2.0 A RRM (2.0 s, 1.0 kHz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature (Note 1) T 65 to +175 C J Peak Surge Junction Temperature T 175 C J(pk) (Forward Current Applied) Voltage Rate of Change dv/dt 10,000 V/ s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit Maximum Thermal Resistance, JunctiontoCase Minimum Pad R 1.4 JC C/W Maximum Thermal Resistance, JunctiontoAmbient Minimum Pad R 55 JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Instantaneous Forward Voltage (Note 2) V V F (i = 20 A, T = 25C) 0.53 0.70 F J (i = 20 A, T = 125C) 0.46 0.60 F J (i = 40 A, T = 25C) 0.64 0.80 F J (i = 40 A, T = 125C) 0.62 0.75 F J Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 25C) 0.09 1.0 J (Rated DC Voltage, T = 125C) 30 50 J

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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