MBR440MFST1G ON Semiconductor

MBR440MFST1G electronic component of ON Semiconductor Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MBR440MFST1G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBR440MFST1G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. MBR440MFST1G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 4.0A 40V SCHOTTKY DIODE
Datasheet: MBR440MFST1G Datasheet (PDF)
Price (USD)
4500: USD 0.1943 ea
Line Total: USD 874.35 
Availability : 0
  
QtyUnit Price
4500$ 0.1943

Availability 0
Ship by Tue. 30 Sep to Mon. 06 Oct
MOQ : 4500
Multiples : 1500
QtyUnit Price
4500$ 0.1943

   
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We are delighted to provide the MBR440MFST1G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBR440MFST1G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBR440MFS, NRVB440MFS SWITCHMODE Power Rectifiers These stateoftheart devices have the following features: Features MBR440MFS, NRVB440MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 40 R Average Rectified Forward Current I 4.0 A F(AV) (Rated V , T = 165C) R C Peak Repetitive Forward Current, I 8.0 A FRM (Rated V , Square Wave, 20 kHz, T = 165C) R C NonRepetitive Peak Surge Current I 40 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J Unclamped Inductive Switching Energy (10 mH Inductor, Non repetitive) E 10 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 2.4 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) v V F (i = 4 Amps, T = 125C) 0.58 0.63 F J (i = 4 Amps, T = 25C) 0.59 0.65 F J Instantaneous Reverse Current (Note 1) i mA R (Rated dc Voltage, T = 125C) 10 15 J (Rated dc Voltage, T = 25C) 0.070 0.8 J 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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