Switch-mode Schottky Power Rectifier MBRF20100CTG The Switchmode Power Rectifier employs the Schottky Barrier principle in a large area metal to silicon power diode. Stateoftheart geometry features epitaxial construction with oxide www.onsemi.com passivation and metal overlay contact. Ideally suited for use as rectifiers in very lowvoltage, highfrequency switching power supplies, free wheeling diodes and polarity protection diodes. SCHOTTKY BARRIER Features RECTIFIER Highly Stable Oxide Passivated Junction 20 AMPERES, 100 VOLTS Very Low Forward Voltage Drop Matched Dual Die Construction 1 2 High Junction Temperature Capability 3 High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL 94 V0 0.125 in Electrically Isolated. No Isolation Hardware Required. These are PbFree Devices TO220 FULLPAK CASE 221D Mechanical Characteristics: Case: Epoxy, Molded 1 2 Weight: 1.9 Grams (Approximately) 3 Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: ORDERING AND MARKING INFORMATION 260C Max. for 10 Seconds See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2019 Rev. 11 MBRF20100CT/DMBRF20100CTG MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 10 A F(AV) (Rated V ), T = 133C Total Device 20 R C Peak Repetitive Forward Current I 20 A FRM (Rated V , Square Wave, 20 kHz), T = 133C R C Nonrepetitive Peak Surge Current I 150 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 0.5 A RRM Operating Junction and Storage Temperature Range (Note 1) T , T 65 to +175 C J stg Voltage Rate of Change (Rated V ) dv/dt 10000 V/ s R RMS Isolation Voltage (t = 0.3 second, R.H. 30%, T = 25C) (Note 2) V 4500 V A iso1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Per Leg) Rating Symbol Value Unit Maximum Thermal Resistance, Junction to Case R 3.5 C/W JC Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 3) v V F (i = 10 Amp, T = 25C) 0.85 F C (i = 10 Amp, T = 125C) 0.75 F C (i = 20 Amp, T = 25C) 0.95 F C (i = 20 Amp, T = 125C) 0.85 F C Maximum Instantaneous Reverse Current (Note 3) i mA R (Rated DC Voltage, T = 25C) 0.15 C (Rated DC Voltage, T = 125C) 150 C 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA 2. Proper strike and creepage distance must be provided. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 50 T = 150C J 150C 20 10 T = 125C J 10 T = 100C J 100C 1.0 5.0 T = 25C J 3.0 0.1 1.0 0.01 T = 25C J 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 v , INSTANTANEOUS VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode www.onsemi.com 2 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F I , REVERSE CURRENT (mA) R