Product Information

MBRM110LT1G

MBRM110LT1G electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers 1A 10V Low Vf
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6967 ea
Line Total: USD 0.7

5048 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
776 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

MBRM110LT1G
ON Semiconductor

1 : USD 0.7486
10 : USD 0.6325
100 : USD 0.4485
500 : USD 0.3852
1000 : USD 0.3369
3000 : USD 0.3047
6000 : USD 0.2979
9000 : USD 0.2875
24000 : USD 0.2852

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G Surface Mount Schottky Power Rectifier MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 10 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O 1.0 (T = 115C, R = 35C/W) L JL NonRepetitive Peak Surge Current I A FSM (NonRepetitive peak surge current, halfwave, single phase, 60 Hz) 50 Storage Temperature T 55 to 125 C stg Operating Junction Temperature T 55 to 125 C J Voltage Rate of Change dv/dt V/ s (Rated V , T = 25C) 10,000 R J Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction toLead (Anode) (Note 1) R 35 C/W tjl Thermal Resistance, JunctiontoTab (Cathode) (Note 1) R 23 tjtab Thermal Resistance, JunctiontoAmbient (Note 1) R 277 tja 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) V T = 25C T = 100C V F J J (I = 0.1 A) 0.280 0.175 F (I = 1.0 A) 0.365 0.275 F (I = 2.0 A) 0.415 0.325 F Maximum Instantaneous Reverse Current (Note 2) I T = 25C T = 100C mA R J J (V = 5.0 V) 0.2 30 R (V = 10 V) 0.5 60 R 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. 10 10 T = 125C J T = 125C J 100C 100C 75C 25C 75C 55C 1 1 25C 55C 0.1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.2 0.3 0.4 0.5 0.6 0.7 V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) F F Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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