MBRM120LT3G ON Semiconductor

MBRM120LT3G electronic component of ON Semiconductor
MBRM120LT3G ON Semiconductor
MBRM120LT3G Schottky Diodes & Rectifiers
MBRM120LT3G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MBRM120LT3G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBRM120LT3G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. MBRM120LT3G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: ON Semiconductor Schottky Diodes & Rectifiers 1A 20V Low Vf
Datasheet: MBRM120LT3G Datasheet (PDF)
Price (USD)
2500: USD 0.1642 ea
Line Total: USD 410.5 
Availability : 16005
  
Ship by Thu. 20 Nov to Wed. 26 Nov
QtyUnit Price
2500$ 0.1642
5000$ 0.1585
7500$ 0.1578
12000$ 0.1423
36000$ 0.1385
60000$ 0.1372
108000$ 0.1365
156000$ 0.1358

Availability 16005
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 2500
Multiples : 1
QtyUnit Price
2500$ 0.1642
5000$ 0.1585
7500$ 0.1578
12000$ 0.1423
36000$ 0.1385
60000$ 0.1372
108000$ 0.1365
156000$ 0.1358


Availability 14863
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 1000
Multiples : 1
QtyUnit Price
1000$ 0.2601
1167$ 0.223
1178$ 0.2208
1296$ 0.2007
1325$ 0.1963
1499$ 0.1736
1537$ 0.1693
3000$ 0.1585
6000$ 0.1543
15000$ 0.1501


Availability 14863
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 1178
Multiples : 1
QtyUnit Price
1178$ 0.2208
1296$ 0.2007
1325$ 0.1963
1499$ 0.1736
1537$ 0.1693
3000$ 0.1585
6000$ 0.1543
15000$ 0.1501


Availability 14550
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.1932
5000$ 0.1865
7500$ 0.1856
12500$ 0.1674

   
Manufacturer
Product Category
Package / Case
Packaging
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Configuration
Diode Case Style
No. Of Pins
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Product Range
Svhc
Breakdown Voltage Max
Current Ifsm
Current Ir Max
Diode Type
Forward Voltage
Junction Temperature Tj Max
Operating Temperature Min
Operating Temperature Range
Semiconductor Technology
Termination Type
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MBRM120LT3G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBRM120LT3G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G Schottky Power Rectifier, MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 20 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (At Rated V , T = 135C) 1.0 R C Peak Repetitive Forward Current I A FRM (At Rated V , Square Wave, 100 kHz, T = 135C) 2.0 R C NonRepetitive Peak Surge Current I A FSM (NonRepetitive peak surge current, halfwave, single phase, 60 Hz) 50 Storage Temperature T 55 to 150 C stg Operating Junction Temperature T 55 to 125 C J Voltage Rate of Change dv/dt V/ s (Rated V , T = 25C) 10,000 R J Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction toLead (Anode) (Note 1) R 35 C/W tjl Thermal Resistance, JunctiontoTab (Cathode) (Note 1) R 23 tjtab Thermal Resistance, JunctiontoAmbient (Note 1) R 277 tja 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 V T = 25C T = 85C V F J J (I = 0.1 A) 0.34 0.26 F (I = 1.0 A) 0.45 0.415 F (I = 3.0 A) 0.65 0.67 F I mA Maximum Instantaneous Reverse Current (Note 2), See Figure 4 T = 25C T = 85C R J J (V = 20 V) 0.40 25 R (V = 10 V) 0.10 18 R 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. 10 10 T = 125C J T = 85C J T = 125C J 1.0 1.0 T = 85C J T = 25C J T = 40C T = 25C J J 0.1 0.1 0.1 0.3 0.5 0.7 0.9 0.1 0.3 0.5 0.7 0.9 v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE F F (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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