Surface Mount
Schottky Power Rectifier
MBRS120T3G,
SBRS8120T3G, SBRS8120N
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
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epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
SCHOTTKY BARRIER
as free wheeling and polarity protection diodes in surface mount
RECTIFIER
applications where compact size and weight are critical to the system.
1.0 AMPERE, 20 VOLTS
Features
Small Compact Surface Mountable Package with JBend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
SMB
Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, T = 25C)
J
CASE 403A
Excellent Ability to Withstand Reverse Avalanche Energy Transients
GuardRing for Stress Protection
MARKING DIAGRAM
ESD Ratings:
Human Body Model = 3B (> 16000 V)
AYWW
Machine Model = C (> 400 V)
B12
SBRS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
B12 = Specific Device Code
These are PbFree Devices
A = Assembly Location**
Y = Year
Mechanical Characteristics
WW = Work Week
Case: Epoxy, Molded
= PbFree Package
Weight: 95 mg (Approximately)
(Note: Microdot may be in either location)
Finish: All External Surfaces Corrosion Resistant and Terminal
**The Assembly Location code (A) is front side
Leads are Readily Solderable
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
Lead and Mounting Surface Temperature for Soldering Purposes:
the front side assembly code may be blank.
260C Max. for 10 Seconds
Cathode Polarity Band
ORDERING INFORMATION
Device Package Shipping
MBRS120T3G SMB 2 500 /
(PbFree) Tape & Reel
SBRS8120T3G* SMB 2 500 /
(PbFree) Tape & Reel
SBRS8120NT3G*
SMB
2 500 /
(PbFree)
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2012
1 Publication Order Number:
December, 2019 Rev. 9 MBRS120T3/DMBRS120T3G, SBRS8120T3G, SBRS8120N
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage V 20 V
RRM
Working Peak Reverse Voltage V
RWM
DC Blocking Voltage V
R
Average Rectified Forward Current I A
F(AV)
(T = 115C) 1.0
L
NonRepetitive Peak Surge Current I A
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 40
Operating Junction Temperature T 65 to +125 C
J
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, JunctiontoLead R C/W
JL
(T = 25C) 12
L
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 1) V V
F
(i = 1.0 A, T = 25C) 0.6
F J
Maximum Instantaneous Reverse Current (Note 1) i mA
R
(Rated dc Voltage, T = 25C) 1.0
J
(Rated dc Voltage, T = 100C) 10
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
TYPICAL CHARACTERISTICS
100
50
1
30
T = 100C T = 125C
C J
20
0.7
10
0.5
100C
5
3
0.3
2
75C
0.2
1
0.5
0.1
0.3
0.2
25C
0.07
T = 25C
C
0.1
0.05
0.05
0.03
0.03
0.02
0.02
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 4 8 12 1620 2428 32 3640
v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS)
F R
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
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2
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
I , REVERSE CURRENT (mA)
R